Patent
Feol low-k spacers
Kenneth S. Collins,Kartik Ramaswamy,Ying Zhang,Hua Chang,Leonid Dorf,Ming-Feng Wu,Shahid Rauf +6 more
TLDR
In this article, the authors describe the formation of a transistor using low-K dielectric constant material (e.g., a void) between an elongated gate and a contact to increase the attainable switching speed of the device.Abstract:
Transistors and their methods of formation are described. Low dielectric constant material (e.g. a void) is placed between an elongated gate and a contact to increase the attainable switching speed of the gate of the device. An elongated structural slab of silicon nitride is temporarily positioned on both sides of the gate. Silicon oxide is formed over the silicon nitride slabs and the gate. Contacts are formed through the silicon oxide. The silicon oxide is selectively etched back to expose the silicon nitride slab. A portion or all the silicon nitride slab is removed and replaced with low-K dielectric or any dielectric with an air-gap to enable higher switching speed of the transistor. The highly-selective silicon nitride etch uses remotely excited fluorine and a very low electron temperature in the substrate processing region.read more
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Semiconductor processing systems having multiple plasma configurations
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent
Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
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Patent
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TL;DR: In this article, a method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation, and the plasma effluents created are flowed into a substrate processing region.