The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

We report ultra-efficient multiple exciton generation (MEG) for single photon absorption in colloidal PbSe and PbS quantum dots (QDs). We employ transient absorption spectroscopy and present measurement data acquired for both intraband as well as interband probe energies. Quantum yields of 300% indicate the creation, on average, of three excitons per absorbed photon for PbSe QDs at photon energies that are four times the QD energy gap. Results indicate that the threshold photon energy for MEG in QDs is twice the lowest exciton absorption energy. We find that the biexciton effect, which shifts the transition energy for absorption of a second photon, influences the early time transient absorption data and may contribute to a modulation observed when probing near the lowest interband transition. We present experimental and theoretical values of the size-dependent interband transition energies for PbSe QDs. We present experimental and theoretical values of the size-dependent interband transition energies for ...

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Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots

The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile.

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Subwavelength-diameter silica wires for low-loss optical waveguiding

ZnO nanowires were mass produced using a physical vapor deposition approach. The ZnO nanowire monocrystallites have an average diameter around 60 nm and length up to a few micrometers. The unidirectional growth of the ZnO nanowires was controlled by the conventional vapor-liquid-solid mechanism. Intensive UV light emission peaked around 3.27 eV was observed at room temperature, which was assigned to emission from free exciton under low excitation intensity. The observed room temperature UV emission was ascribed to the decrease in structure defects as compared to bulk ZnO materials, and in particularly to the size effect in the ZnO wires.

Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach

This paper describes a vapor-phase approach to the facial synthesis of cupric oxide (CuO) nanowires supported on the surfaces of various copper substrates that include grids, foils, and wires. A typical procedure simply involved the thermal oxidation of these substrates in air and within the temperature range from 400 to 700 °C. Electron microscopic studies indicated that these nanowires had a controllable diameter in the range of 30−100 nm with lengths of up to 15 μm by varying the temperature and growth time. Electron diffraction and high-resolution TEM studies implied that each CuO nanowire was a bicrystal divided by a (111) twin plane in its middle along the longitudinal axis. A possible mechanism was also proposed to account for the growth of these CuO nanowires.

CuO Nanowires Can Be Synthesized by Heating Copper Substrates in Air

We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form of amorphous nanowires at a diameter of ∼15 nm and a length up to hundreds micrometers. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV. The intensity of the emission is two orders of magnitude higher than that of porous silicon. The SiONWs may have potential applications in high-resolution optical heads of scanning near-field optical microscope or nanointerconnections in future integrated optical devices.

Amorphous silica nanowires: Intensive blue light emitters

We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires.

Nanoscale silicon wires synthesized using simple physical evaporation

The recent success of bulk synthesis of pure nanoscale silicon quantum wires (SiQW's) enables us to evaluate their photoluminescence (PL) characteristics under ultraviolet photoexcitation. Intensive multiple light emissions ranging from dark red to blue regions were revealed for as-grown and partially oxidized SiQW samples. The red light emission was ascribed to a quantum confinement effect originating from the crystalline core of the SiQW's that is closely mediated by the interface. However, the PL emission from green to blue is found to be definitely unrelated to quantum confinement; instead they are attributed to the radiative recombination from defect centers in the overcoating layer of the amorphous silicon oxide outside the SiQW's.

Direct evidence of quantum confinement from the size dependence of the photoluminescence of silicon quantum wires

The charge carrier dynamics in the novel CdSe nanocluster films fabricated by a chemical deposition method was studied by the femtosecond pump–probe measurements. The intensity dependent signals can be well described by a rate equation model. The overall kinetic process is listed as follows: a rapid electron trapping (<1 ps), the Auger recombination, the recombination of electrons in the surface states (∼46 ps) and the long-lived trapped electron–hole recombination. When the cluster radius is as large as 27 nm, an induced transient absorption can be observed. We attribute the induced transient absorption to the formation of the biexcitons or the trapped-carrier-induced Stark effect.

Femtosecond investigation of charge carrier dynamics in CdSe nanocluster films

GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) properties of the Si nanowires were investigated in correlation with the diameter of the crystalline core. Intensive light emission was observed peaking at dark red, green and blue regions for the as grown and partially oxidized SiNW samples. The red PL emission is ascribed to the quantum confinement effect of the crystalline core of the SiNWs, while the green and blue ones are attributed to the radiative recombination of the defect centers in the amorphous silicon oxide layer surrounding the SiNWs.

Yinghua Zou

Papers

Amorphous silica nanowires: Intensive blue light emitters

Nanoscale silicon wires synthesized using simple physical evaporation

Direct evidence of quantum confinement from the size dependence of the photoluminescence of silicon quantum wires

Femtosecond investigation of charge carrier dynamics in CdSe nanocluster films

Synthesis and photoluminescence properties of semiconductor nanowires