H
Hongzhou Zhang
Researcher at Trinity College, Dublin
Publications - 173
Citations - 8852
Hongzhou Zhang is an academic researcher from Trinity College, Dublin. The author has contributed to research in topics: Nanowire & Scanning electron microscope. The author has an hindex of 43, co-authored 168 publications receiving 7964 citations. Previous affiliations of Hongzhou Zhang include University College Dublin & Beihang University.
Papers
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Journal ArticleDOI
Ultrafast Saturable Absorption of Two-Dimensional MoS2 Nanosheets
Kangpeng Wang,Jun Wang,Jintai Fan,Mustafa Lotya,Arlene O’Neill,Daniel Fox,Yanyan Feng,Xiaoyan Zhang,Benxue Jiang,Quanzhong Zhao,Hongzhou Zhang,Jonathan N. Coleman,Long Zhang,Werner J. Blau,Werner J. Blau +14 more
TL;DR: Employing high-yield production of layered materials by liquid-phase exfoliation, molybdenum disulfide (MoS2) dispersions with large populations of single and few layers were prepared and exhibited significant saturable absorption (SA) for the femtosecond pulses.
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Efficient field emission from ZnO nanoneedle arrays
Yanwu Zhu,Hongzhou Zhang,Xiaochen Sun,S. Q. Feng,Jianbin Xu,Qing-Tai Zhao,Bin Xiang,Rongming Wang,Dapeng Yu +8 more
TL;DR: In this paper, a well-aligned array of ZnO nanoneedles was fabricated using a simple vapor phase growth, and the diameters of the nanomeedle tips are as small as several nanometers, which is highly in favor of the field emission.
Journal ArticleDOI
Amorphous silica nanowires: Intensive blue light emitters
Dapeng Yu,Q. L. Hang,Y. Ding,Hongzhou Zhang,Z. G. Bai,Jing Jing Wang,Yinghua Zou,Wei Qian,Guangcheng Xiong,S. Q. Feng +9 more
TL;DR: In this article, a large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method was reported. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV.
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Large-scale mechanical peeling of boron nitride nanosheets by low-energy ball milling
TL;DR: In this article, a tailored ball milling condition was proposed to produce a high quality boron nitride (BN) nanosheets in high yield and efficiency. But the in-plane structure of the BN has not been damaged as shown by near edge X-ray absorption fine structure measurements.
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Nanoscale silicon wires synthesized using simple physical evaporation
Dapeng Yu,Z. G. Bai,Y. Ding,Q. L. Hang,Hongzhou Zhang,Jing Jing Wang,Yinghua Zou,Wei Qian,Guangcheng Xiong,H. T. Zhou,S. Q. Feng +10 more
TL;DR: In this article, a large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach was reported, where high purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment.