Z
Z. G. Bai
Researcher at Peking University
Publications - 10
Citations - 1617
Z. G. Bai is an academic researcher from Peking University. The author has contributed to research in topics: Nanowire & Silicon. The author has an hindex of 9, co-authored 10 publications receiving 1583 citations.
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Journal ArticleDOI
Amorphous silica nanowires: Intensive blue light emitters
Dapeng Yu,Q. L. Hang,Y. Ding,Hongzhou Zhang,Z. G. Bai,Jing Jing Wang,Yinghua Zou,Wei Qian,Guangcheng Xiong,S. Q. Feng +9 more
TL;DR: In this article, a large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method was reported. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV.
Journal ArticleDOI
Nanoscale silicon wires synthesized using simple physical evaporation
Dapeng Yu,Z. G. Bai,Y. Ding,Q. L. Hang,Hongzhou Zhang,Jing Jing Wang,Yinghua Zou,Wei Qian,Guangcheng Xiong,H. T. Zhou,S. Q. Feng +10 more
TL;DR: In this article, a large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach was reported, where high purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment.
Journal ArticleDOI
Ga2O3 nanowires prepared by physical evaporation
Hongzhou Zhang,Yunchuan Kong,Yongzhong Wang,X. Du,Z. G. Bai,Jing Jing Wang,Dapeng Yu,Y. Ding,Q.L Hang,S.Q. Feng +9 more
TL;DR: In this article, the growth of the GaONW is not controlled by the well-known vapor liquid solid (VLS) mechanism, instead they are seemingly grown via a vapor-solid (VS) process, in which the structural defects play an important role both during the nucleation and the preferable axial growth of wires.
Journal ArticleDOI
Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature
Dapeng Yu,Dapeng Yu,Chun-Sing Lee,I. Bello,X.S. Sun,Y.H. Tang,Guangwen Zhou,Z. G. Bai,Ze Zhang,S.Q. Feng +9 more
TL;DR: In this article, the synthesis of nano-scale silicon wires by using laser ablation at high temperature was reported, and the structure, morphology and chemical composition of the SiNWs have been characterized by using high resolution X-ray diffraction (XRD), high resolution electron microscopy (HREM), as well as spectroscopy of energy dispersive x-ray fluorescence (EDAX).
Journal ArticleDOI
The growth mechanism of silicon nanowires and their quantum confinement effect
TL;DR: In this article, the growth mechanism of SiNWs is described based on the vapor-liquid-solid (VLS) model, which can well explain much of the morphology of SiNNs.