Yong Seung Kim

TL;DR: In this paper, the authors report thickness-independent transport properties over wide thickness ranges and identify two surface channels of very different behaviors, which are consistent with the topological surface states and the surface accumulation layers.

TL;DR: Hot electrons become spatially localized at the centre of the graphene layer, resulting in a 1,000-fold enhancement in thermal radiation efficiency and paving the way towards the realization of commercially viable large-scale, atomically thin, flexible and transparent light emitters and displays with low operation voltage and graphene-based on-chip ultrafast optical communications.

TL;DR: In this article, a number of transport properties in topological insulator (TI) Bi{}_{2}$Se${}_{3}$ exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm--170 \ensuremath{\mu}m).

TL;DR: In this article, a two-phase growth process was proposed to achieve interfacial-layer-free epitaxial growth of Bi 2 Se 3 films on Si substrates, where a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface was obtained between Bi 2 SE 3 and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction.

TL;DR: In this paper, the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy was reported.