Y
Yorito Kakiuchi
Researcher at Toshiba
Publications - 14
Citations - 562
Yorito Kakiuchi is an academic researcher from Toshiba. The author has contributed to research in topics: High voltage & Transistor. The author has an hindex of 8, co-authored 14 publications receiving 503 citations.
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Journal ArticleDOI
Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
Wataru Saito,Tomohiro Nitta,Yorito Kakiuchi,Yasunobu Saito,Kunio Tsuda,Ichiro Omura,Marina Yamaguchi +6 more
TL;DR: In this article, the dynamic on-resistance increase associated with the current collapse phenomena in high-voltage GaN high-electron-mobility transistors (HEMTs) has been suppressed by employing an optimized fieldplate (FP) structure.
Journal ArticleDOI
A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT
Wataru Saito,Tomohiro Nitta,Yorito Kakiuchi,Yasunobu Saito,Kunio Tsuda,Ichiro Omura,Marina Yamaguchi +6 more
TL;DR: In this article, a boost converter with a 940-V/4.4 GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage HEMTs in power electronic applications.
Journal ArticleDOI
Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs
Wataru Saito,Yorito Kakiuchi,Tomohiro Nitta,Yasunobu Saito,Takao Noda,Hidetoshi Fujimoto,Akira Yoshioka,Tetsuya Ohno,Masakazu Yamaguchi +8 more
TL;DR: In this paper, four types of field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in highvoltage GaN-HEMTs.
Journal ArticleDOI
O n -Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage
Wataru Saito,Tomohiro Nitta,Yorito Kakiuchi,Yasunobu Saito,Kunio Tsuda,Ichiro Omura,Marina Yamaguchi +6 more
TL;DR: In this paper, a dual-FP structure, which was a combination of gate FP and source FP, was used to suppress the ON-resistance increase due to minimization of the gate-edge electric field concentration.
Proceedings ArticleDOI
Demonstration of resonant inverter circuit for electrodeless fluorescent lamps using high voltage GaN-HEMT
Wataru Saito,Tomokazu Domon,Ichiro Omura,Tomohiro Nitta,Yorito Kakiuchi,Kunio Tsuda,Marina Yamaguchi +6 more
TL;DR: In this article, a resonant inverter circuit for electrodeless fluorescent lamps using a high-voltage GaN-HEMT as a main switching device was presented.