Showing papers by "Youdou Zheng published in 1994"
TL;DR: SiH4 and GeH4 deposition of Si1−xGex layers by a rapid thermal process very low pressure chemical vapor deposition method has been studied in this paper, where the growth rate of the SiGe alloy reaches its maximum value and then decreases as Ge composition increases.
Abstract: SiH4 and GeH4 deposition of Si1−xGex layers by a rapid thermal process very low pressure chemical vapor deposition method has been studied in this paper. The Ge incorporation rate increases to a maximum value and then decreases as temperature increases. The growth rate of the SiGe alloy reaches its maximum value and then decreases as Ge composition increases. Ge incorporation also enhances the Si deposition rate in the Si1−xGex alloy. These results have been explained by increasing the hydrogen desorption rate at low temperatures and low value of x (the germanium concentration) and decreasing the adsorption probability of reactive hydrides at high temperature and high value of x.
16 citations
TL;DR: In this article, a two-step process was used to grow cubic silicon carbide films (β-SiC) on monocrystalline silicon wafers by hot filament chemical vapor deposition (HFCVD) at temperatures ranging from 500 to 650°C.
Abstract: Cubic silicon carbide films (β-SiC) have been successfully grown on monocrystalline silicon wafers by hot filament chemical vapor deposition (HFCVD) at temperatures ranging from 500 to 650°C, fulfilled by a two step process. Raman spectrum of the HFCVD-grown β-SiC films shows a characteristic peak at 975 cm-1 with a full width at half maximum (FWHM) of 76 cm-1. At room temperature, the films emit visible photoluminescence at 580 nm with an FWHM of 0.4 eV. X-ray diffraction and x-ray photoelectron spectroscopy investigations reveal that the epitaxial films are of good quality.
5 citations
TL;DR: In this paper, the authors used Auger Electron Spectroscopy to detect the Ge composition in the SiGe layers and found that the ge composition is not uniform in strained SiGe layer.
1 citations
TL;DR: SiH4 and GeH4 Deposition and In-Situ Doping of SiGe/Si Strained Heterostructures by Rapid Thermal Process Very Low Pressure Chemical Vapor Deposition method have been studied in this article.
Abstract: SiH4 and GeH4 Deposition and In-Situ Doping of SiGe/Si Strained Heterostructures by Rapid Thermal Process Very Low Pressure Chemical Vapor Deposition method have been studied in this paper. Ge incorporation rate increases to a maximum value and then decreases as temperature increases, the growth rate of SiGe alloy reaches its maximum value and then decreases as Ge composition increases. Ge incorporation also enhances Si deposition rate in SiGe alloy. The Boron and Phosphorus doping would change thegrowth rate of SiGe layers and the sharp doping interfaces in SiGe/Si heterostructures have been obtained.