Yuan Wu

TL;DR: In this paper, the electron transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN modulation-doped field effect transistors have been measured in the magnetic field range of 0-12 T, the temperature range of 25-300 K, and gate bias range of +0.5 to −2.0 V.

TL;DR: In this article, Atom probe tomography was used to study the formation of Mn-Ni-Si-dominated precipitates in irradiated Cu-free and Cu-bearing reactor pressure vessel steels.

TL;DR: In this article, high-resolution transmission electron microscopy (TEM), scanning transmission electron microscope (SEM) and energy dispersive X-ray spectroscopy were combined to comprehensively characterize the Ti-Y-O enriched nanoscale features (NF) in a nanostructured ferritic alloy (NFA), MA957.

TL;DR: In this article, the X-ray reciprocal space maps recorded around the asymmetric reflection revealed that the MQWs in both nanopillars and nanostripes relaxed after nanopatterning and adopted a larger in-plane lattice constant than the underlying GaN layer.

TL;DR: In this article, a thin barrier-donor layer of 200 /spl Aring/ was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (f/sub t/) of short-gate-length AlGaN/GaN MODFETs.