N
N. Fichtenbaum
Researcher at University of California, Santa Barbara
Publications - 23
Citations - 1122
N. Fichtenbaum is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 16, co-authored 23 publications receiving 1024 citations.
Papers
More filters
Journal ArticleDOI
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
Sarah L. Keller,N. Fichtenbaum,Feng Wu,David F. Brown,A. Rosales,Steven P. DenBaars,James S. Speck,Umesh Mishra +7 more
TL;DR: In this paper, N-polar GaN films were grown on misoriented (0001) sapphire substrates and the development of a high temperature nucleation process was investigated.
Journal ArticleDOI
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition
TL;DR: In this article, secondary ion mass spectroscopy was used to investigate the incorporation of oxygen, carbon, and hydrogen impurities in smooth N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition.
Journal ArticleDOI
Growth and characterization of N-polar InGaN/GaN multiquantum wells
TL;DR: In this paper, the properties of N-polar InGaN∕GaN multiquantum wells (MQWs) grown by metal-organic chemical vapor deposition were investigated.
Journal ArticleDOI
Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells
Sarah L. Keller,C. Schaake,N. Fichtenbaum,Carl J. Neufeld,Yuan Wu,Kelly McGroddy,Aurelien David,Steven P. DenBaars,Claude Weisbuch,James S. Speck,Umesh Mishra +10 more
TL;DR: In this article, the X-ray reciprocal space maps recorded around the asymmetric reflection revealed that the MQWs in both nanopillars and nanostripes relaxed after nanopatterning and adopted a larger in-plane lattice constant than the underlying GaN layer.
Journal ArticleDOI
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition
Sarah L. Keller,C. S. Suh,Zhan Chen,Rongming Chu,Siddharth Rajan,N. Fichtenbaum,Motoko Furukawa,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this paper, a smooth N-polar GaN/AlxGa1−xN/GaN heterostructures with a different Al-mole fraction were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates with a misorientation angle of 4° toward the a-sapphire plane.