Showing papers by "Yuchao Yang published in 2011"
TL;DR: It is demonstrated that nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages holds potential for next generation ultra-dense nonVolatile memories.
Abstract: We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories.
122 citations
TL;DR: In this paper, the magnetic properties of the Mn-doped LiNbO 3 lattice were analyzed using X-ray absorption near edge structure and it was shown that the Mn atoms substituted the Li atoms in the lattice and the magnetic mechanism was understood with the aid of electronic structure calculation using local density approximation plus U method.
11 citations
TL;DR: In this paper, the doped carbon atoms formed graphite phases and C-N clusters dispersing in the films, which influenced the electric and magnetic properties significantly, and the magnetism for the carbon-doped samples are stronger than those of samples without carbon doping.
11 citations
Patent•
29 Jun 2011
TL;DR: In this article, a nonvolatile resistance variation memory structure and preparation method in the crossing field of new material and microelectronic technology is described, which comprises a silicon lining, as well as a silicon oxide dielectric layer, a titanium adhesion layer and a platinum substrate electrode layer.
Abstract: The invention discloses a nonvolatile resistance variation memory structure and preparation method in the crossing field of new material and microelectronic technology. The structure comprises a silicon lining, as well as a silicon oxide dielectric layer, a titanium adhesion layer, a platinum substrate electrode layer, a first zinc oxide dielectric layer, a tungsten nano crystal electrical chargestorage layer, a second zinc oxide dielectric layer and a top electrode material layer, tungsten nano crystal is wrapped and buried in the zinc oxide dielectric layers to be used as electrical chargestorage layer, and the capture/release action of tungsten nano crystal towards electrons is used for realizing the shift between high resistance and low resistance. The structure of the invention leads to the improvement of the programming/erasing speed of a nonvolatile storage unit, the reduction of programming/erasing voltage, and the improvement of data reservation feature as well as programming/erasing toleration and other storage performances; the preparation method is simple and compatible with conventional CMOS silicon plane technique.
2 citations