Y
Yuji Zhao
Researcher at Arizona State University
Publications - 162
Citations - 3680
Yuji Zhao is an academic researcher from Arizona State University. The author has contributed to research in topics: Light-emitting diode & Gallium nitride. The author has an hindex of 29, co-authored 135 publications receiving 2882 citations. Previous affiliations of Yuji Zhao include University of California, Santa Barbara & Rice University.
Papers
More filters
Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TL;DR: In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.
Journal ArticleDOI
High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
Yuji Zhao,Shinichi Tanaka,Chih Chien Pan,Kenji Fujito,Daniel F. Feezell,James S. Speck,Steven P. DenBaars,Shuji Nakamura +7 more
TL;DR: In this article, a high-power blue light-emitting diode (LED) with high external quantum efficiency and low droop on a free-standing (2021) GaN substrate was reported.
Journal ArticleDOI
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (2021) GaN Substrates
Shuichiro Yamamoto,Shuichiro Yamamoto,Yuji Zhao,Chih Chien Pan,Roy B. Chung,Kenji Fujito,Junichi Sonoda,Steven P. DenBaars,Shuji Nakamura +8 more
TL;DR: In this article, the authors demonstrate high-efficiency green and yellow-green singlequantum-well light-emitting diodes (LEDs) grown on semipolar (2021) GaN substrates by metal organic chemical vapor deposition.
Journal ArticleDOI
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Yuji Zhao,Qimin Yan,Chia-Yen Huang,Shih Chieh Huang,Po Shan Hsu,Shinichi Tanaka,Chih Chien Pan,Yoshinobu Kawaguchi,Kenji Fujito,Chris G. Van de Walle,James S. Speck,Steven P. DenBaars,Shuji Nakamura,Daniel F. Feezell +13 more
TL;DR: In this article, the authors report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates, and show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs).
Journal ArticleDOI
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
TL;DR: In this paper, the theoretical background, device performance, material properties, and physical mechanisms for nonpolar and semipolar III-nitride semiconductors and associated blue and green LEDs are reviewed.