A display apparatus includes a substrate and a plurality of pixels disposed on the substrate. Each pixel includes a gate electrode disposed on the substrate, a gate dielectric layer disposed on the substrate and the gate electrode, an oxide semiconductor pattern disposed on the gate dielectric layer, a first insulating pattern disposed on the oxide semiconductor pattern that overlaps the gate electrode, a second insulating pattern disposed on the oxide semiconductor pattern and spaced apart from the first insulating pattern, source and drain electrodes spaced apart from each other on the oxide semiconductor pattern, a pixel electrode pattern disposed on the second insulating pattern to make contact with the source electrode, and a channel area defined where the oxide semiconductor pattern overlaps the gate electrode. A high carrier mobility channel is formed in the channel area when a turn-on voltage is applied to the gate electrode.

Display apparatus and method of manufacturing the same

Preface. Glossary. 1. Introduction to FPGAs. 2. Commercially Available FPGAs. 3. Technology Mapping for FPGAs. 4. Logic Block Architecture. 5. Routing for FPGAs. 6. Flexibility of FPGA Routing Architectures. 7. A Theoretical Model for FPGA Routing. References. Index.

Field-Programmable Gate Arrays

Energy harvesting is gaining more and more attentions due to its characteristics of ultra-long operation time without maintenance. However, frequent unpredictable power failures from energy harvesters bring performance and reliability challenges to traditional processors. Nonvolatile processors are promising to solve such a problem due to their advantage of zero leakage and efficient backup and restore operations. To optimize the nonvolatile processor design, this paper proposes new metrics of nonvolatile processors to consider energy harvesting factors for the first time. Furthermore, we explore the nonvolatile processor design from circuit to system level. A prototype of energy harvesting nonvolatile processor is set up and experimental results show that the proposed performance metric meets the measured results by less than 6.27% average errors. Finally, the energy consumption of nonvolatile processor is analyzed under different benchmarks.

Ambient energy harvesting nonvolatile processors: from circuit to system

CMOS technology and its sustainable scaling have been the enablers for the design and manufacturing of computer architectures that have been fuelling a wider range of applications. Today, however, both the technology and the computer architectures are suffering from serious challenges/ walls making them incapable to deliver the right computing power at pre-defined constraints. This motivates the need of exploring new architectures and new technologies; not only to maintain the economic benefit of scaling, but also to enable the solutions of emerging computer power and data storage hungry applications such as big-data and data-intensive applications. This paper discusses the emerging memristor device as complementary (or alternative) to CMOS device and shows how this device can enable new ways of computing that will at least solve the challenges of today's architectures for some applications. The paper shows not only the potential of memristor devices in enabling new memory technologies and new logic design styles, but also their potential in enabling memory intensive architectures as well as neuromorphic computing due to their unique properties such as the tight integration with CMOS and the ability to learn and adapt.

Memristor for computing: Myth or reality?

Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing spintronic devices, especially magnetic tunnel junction (MTJ) devices with CMOS circuits, are discussed, and the current status of the MTJ-based VLSI computing paradigm is presented along with its prospects and remaining challenges.

Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

An imaging device capable of obtaining high-quality imaging data is provided. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes an eighth transistor. Variation in threshold voltage of an amplifier transistor (the fifth transistor) included in the first circuit can be compensated.

Imaging device and electronic device

A level shifter converting a binary signal having a first potential and a second potential into a signal having the first potential and a third potential, and a signal processing circuit using the level shifter are provided The first potential is higher than the second potential The second potential is higher than the third potential The potential difference between the first potential and the third potential may be more than or equal to 3 V and less than 4 V The level shifter includes a current control circuit which generates a second signal for operating an amplifier circuit for a certain period in accordance with the potential change of the first signal which is input to the amplifier circuit The output of level shifter is input to a gate of an N-channel transistor whose threshold voltage is lower than 0 V

Signal processing device

An FPGA employing c-axis aligned crystal In-Ga-Zn oxide (CAAC-IGZO) FET [1] based configuration memories (CMs) is known to need no reconfiguration thanks to nonvolatile CMs, shows high operation speed due to boosting effect of pass gates used in routing switches (RS) [2], and easily realizes fine-grained multi-context (FG-MC) architecture [2] because CMs which need very low power to keep the contents can be constructed with a small number of transistors. It would be very difficult to realize all of these features in FPGAs using MRAM [3] or RRAM [4]. These features are very unique to the CAAC-IGZO FPGA.

30.9 Normally-off computing with crystalline InGaZnO-based FPGA

Novel Application of Crystalline Indium-Gallium-Zinc-Oxide Technology to LSI: Dynamically Reconfigurable Programmable Logic Device Based on Multi-Context Architecture

Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and is already contributing to mass-production of liquid crystal displays. In this paper by focusing on a very important feature of CAAC-IGZO FET, extremely low off-state current, its pioneering various applications to LSI are reviewed and discussed. In particular, a success in development of a hybrid process of CMOS FETs and CAAC-IGZO FETs promotes our developments of novel memories, processors, image sensors, and recently, field programmable gate arrays (FPGA).

Yuki Okamoto

Papers

Imaging device and electronic device

Signal processing device

30.9 Normally-off computing with crystalline InGaZnO-based FPGA

Novel Application of Crystalline Indium-Gallium-Zinc-Oxide Technology to LSI: Dynamically Reconfigurable Programmable Logic Device Based on Multi-Context Architecture

Applications of crystalline Indium-Gallium-Zinc-Oxide technology to LSI: Memory, processor, image sensor, and field programmable gate array