Yunning Li

TL;DR: It is shown that reconfigurable memristor crossbars composed of hafnium oxide memristors on top of metal-oxide-semiconductor transistors are capable of analogue vector-matrix multiplication with array sizes of up to 128 × 64 cells.

TL;DR: It is shown that a diffusive memristor based on silver nanoparticles in a dielectric film can be used to create an artificial neuron with stochastic leaky integrate-and-fire dynamics and tunable integration time, which is determined by silver migration alone or its interaction with circuit capacitance.

TL;DR: This work monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer memristor neural network and achieves competitive classification accuracy on a standard machine learning dataset.

TL;DR: High‐precision analog tuning and control of memristor cells across a 128 × 64 array is demonstrated, and the resulting vector matrix multiplication (VMM) computing precision is evaluated.

TL;DR: A novel true random number generator utilizing the stochastic delay time of threshold switching in a Ag:SiO2 diffusive memristor, which exhibits evident advantages in scalability, circuit complexity, and power consumption.