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Jung Ho Yoon

Researcher at University of Massachusetts Amherst

Publications -  56
Citations -  3434

Jung Ho Yoon is an academic researcher from University of Massachusetts Amherst. The author has contributed to research in topics: Resistive random-access memory & Thin film. The author has an hindex of 26, co-authored 50 publications receiving 2581 citations. Previous affiliations of Jung Ho Yoon include Argonne National Laboratory & Korea Institute of Science and Technology.

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Fully memristive neural networks for pattern classification with unsupervised learning

TL;DR: It is shown that a diffusive memristor based on silver nanoparticles in a dielectric film can be used to create an artificial neuron with stochastic leaky integrate-and-fire dynamics and tunable integration time, which is determined by silver migration alone or its interaction with circuit capacitance.
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A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

TL;DR: In this article, two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. But these have critical correlations, however, and depend on the involved types of resistance switching memory.
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An artificial nociceptor based on a diffusive memristor.

TL;DR: This study proposes and experimentally demonstrates an artificial nociceptor based on a diffusive memristor with critical dynamics for the first time, and builds an artificial sensory alarm system to experimentally demonstrate the feasibility and simplicity of integrating such novel artificial nOCICEptor devices in artificial intelligence systems, such as humanoid robots.
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Capacitive neural network with neuro-transistors.

TL;DR: In this paper, the authors developed neuro-transistors by integrating dynamic pseudo-memcapacitors as the gates of transistors to produce electronic analogs of the soma and axon of a neuron, with leaky integrate-and-fire dynamics augmented by a signal gain on the output.
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Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

TL;DR: In this article, a two-layered dielectric structure consisting of HfO2 and Ta2O5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration.