scispace - formally typeset
Y

Yusuke Nakazawa

Researcher at University of Tokyo

Publications -  16
Citations -  663

Yusuke Nakazawa is an academic researcher from University of Tokyo. The author has contributed to research in topics: Quantum Hall effect & Dirac (software). The author has an hindex of 10, co-authored 16 publications receiving 551 citations.

Papers
More filters
Journal ArticleDOI

Low-temperature magnetic properties of the ferromagnetic organic radical, p-nitrophenyl nitronyl nitroxide.

TL;DR: Low-temperature magnetic properties of the p-nitrophenyl nitronyl nitroxide phases of p-NPNN were determined by measuring the specific heat, the magnetic susceptibility, and the hysteresis curve of magnetization above $^{3}\mathrm{He}$ temperature in external magnetic fields.
Journal ArticleDOI

Quantum Hall states observed in thin films of Dirac semimetal Cd3As2

TL;DR: The development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 thin films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness is reported.
Journal ArticleDOI

Gate-tuned quantum Hall states in Dirac semimetal (Cd 1- x Zn x ) 3 As 2

TL;DR: In this article, the carrier density control of quantum Hall states realized in thin films of DSM Cd3As2 has been investigated, where chemical doping of Zn combined with electrostatic gating has enabled to tune carrier density both over a wide range and continuously, even across the charge neutrality point.
Journal ArticleDOI

Quantized surface transport in topological Dirac semimetal films.

TL;DR: This work reports surface quantum oscillation and its evolution into quantum Hall states in Cd3As2 thin films, where unconventional bulk states involve in quantized surface transport, and demonstrates surface transport controlled in film samples.
Journal ArticleDOI

Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2

TL;DR: In this paper, the carrier-density control of quantum Hall states realized in thin films of DSM Cd3As2 has been investigated, where chemical doping of Zn combined with electrostatic gating has enabled to tune the carrier density over a wide range and continuously even across the charge neutrality point.