Yuwei Guo

TL;DR: V vapor phase epitaxy is applied to grow well aligned horizontal CsPbX3 (X: Cl, Br, or I or their mixed) nanowire arrays in large scale on mica substrate, revealing that the wire arrays follow the symmetry of mica slab through incommensurate epitaxy, paving a way for a universally applicable method to grow a broad family of halide perovskite materials.

TL;DR: The synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral and the development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field andChiral enantiomer–dependent Rashba-Dresselhaus splitting and circular photogalvanic effects.

TL;DR: Remote epitaxial perovskite films are synthesized using polar substrates coated with graphene with density-controlled dislocations and confirmed to have negative impact on carrier dynamics, providing an avenue to develop free-standing halide perovkite film with low dislocation density and improved carried dynamics.

TL;DR: In this paper, an excellent cathode material for SIBs, i.e., carbon-coated, graphene quantum dots (GQDs) shielded Na 3 (VO) 2 (PO 4 ) 2 F nanocuboids (NVOPF@C), was designed and constructed, which possesses highly exposed crystalline a-b planes for rapid ion diffusion.

TL;DR: It is suggested that single-crystal-based studies are needed to deepen the understanding of the fundamental properties of 2D and 3D halide perovskites, and will eventually contribute to device performance.