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Zhangbao Peng

Researcher at Xiamen University

Publications -  9
Citations -  105

Zhangbao Peng is an academic researcher from Xiamen University. The author has contributed to research in topics: Light-emitting diode & Optical power. The author has an hindex of 4, co-authored 9 publications receiving 52 citations.

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The Impact of Luminous Properties of Red, Green, and Blue Mini-LEDs on the Color Gamut

TL;DR: In this paper, the influence of temperature and driving current on the chromaticity coordinates of mini-LEDs is determined and a drive-current algorithm is proposed to maximize the color gamut of trichromatic mixed light at different temperatures.
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Effect of Carrier Localization and Shockley-Read-Hall Recombination on the Spatial Distribution of Electroluminescence in InGaN LEDs

TL;DR: In this article, a phenomenological model is proposed to account for the competitive mechanism between the carrier localization and the SRH recombination in light-emitting diodes (LEDs).
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Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes — Analysis on the parasitic peaks over wide ranges of temperature and injection density

TL;DR: A thorough investigation on the interplay among carriers and various types of defects should be conducted on the basis of the measurement taken under a wide temperature range, as well as under a proper forward voltage to let the quasi-Fermi level shift across deep defect levels, the band-edge, and to over-band.
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Origins of Inhomogeneous Light Emission From GaN-Based Flip-Chip Green Micro-LEDs

TL;DR: In this paper, the spatially resolved electroluminescence emitted through the sapphire substrate of GaN-based flip-chip green micro-scale light-emitting diodes with $20\times 20,\,\mu \text{m}^{\text {2}}$ mesas has been collected via microscopic hyperspectral imaging.
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Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

TL;DR: In this article, the authors investigated temperature-dependent carrier transfer and efficiency droop on AlGaN-based deep ultraviolet light-emitting diodes and identified the existence of Auger recombination and carrier leakage by the m-power method.