Z
Zhen Tian
Researcher at ShanghaiTech University
Publications - 7
Citations - 481
Zhen Tian is an academic researcher from ShanghaiTech University. The author has contributed to research in topics: Electron mobility & Band gap. The author has an hindex of 6, co-authored 7 publications receiving 327 citations. Previous affiliations of Zhen Tian include Chinese Academy of Sciences.
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Journal ArticleDOI
Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy.
TL;DR: The zigzag and armchair directions of the as-grown 2D crystals are identified and it is shown that Sn deficiency is the main cause of the p-type conductivity.
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Field-effect transistors of high-mobility few-layer SnSe2
TL;DR: In this paper, the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be ∼85 cm2 V−1/s−1 at 300 K, higher than those of the majority of fewlayer transitional metal dichalcogenides.
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Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal.
Bing Deng,Binbin Wang,Ning Li,Rongtan Li,Yani Wang,Jilin Tang,Qiang Fu,Zhen Tian,Peng Gao,Jiamin Xue,Hailin Peng +10 more
TL;DR: A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy and contributes to controlled growth of twist-angle-defined BLG, and provides insights of the electronic properties and interlayer coupling in this intriguing system.
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Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response.
Mingxing Zhao,Mingxing Zhao,Wei Xia,Wei Xia,Yang Wang,Man Luo,Zhen Tian,Yanfeng Guo,Weida Hu,Jiamin Xue +9 more
TL;DR: The layered Nb2SiTe4 is shown to be a stable 2D material with a band gap of 0.39 eV and is established as a good candidate for ambipolar devices and MIR detection.
Journal ArticleDOI
Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe
Zhen Tian,Zhen Tian,Mingxing Zhao,Mingxing Zhao,Xiong-Xiong Xue,Wei Xia,Chenglei Guo,Chenglei Guo,Yanfeng Guo,Yexin Feng,Jiamin Xue,Jiamin Xue +11 more
TL;DR: This work reports a new material system that can form in-plane p-n junctions by thermal conversion of n-type SnSe2 to p- type SnSe, and finds that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment.