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Zhiguo Wang

Researcher at University of Electronic Science and Technology of China

Publications -  237
Citations -  7039

Zhiguo Wang is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Band gap & Density functional theory. The author has an hindex of 40, co-authored 226 publications receiving 5371 citations. Previous affiliations of Zhiguo Wang include Nanjing Tech University & Shenzhen Institute of Information Technology.

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Adsorption and diffusion of lithium on heteroatom-doped monolayer molybdenum disulfide

TL;DR: In this article, the adsorption and diffusion of Li on the heteroatom-doped MoS2 monolayer were investigated using density functional theory, and it was shown that the diffusion energy barriers were slightly decreased as Li diffused towards the doping site, whereas they were increased for the diffusion around the doping sites.
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H+ diffusion and electrochemical stability of Li1+x+yAlxTi2−xSiyP3−yO12 glass in aqueous Li/air battery electrolytes

TL;DR: In this article, the authors investigated the H+ ion diffusion properties in LATP glass and their surface interactions using both experimental and modeling approaches, and they found that the apparent H+ related current observed in the initial cyclic voltammetry scan should be attributed to the adsorption of H+ ions on the LatP glass rather than the bulk diffusion of H+) ions in the glass, and the density functional theory calculations indicate that the H+) ion diffusion energy barrier (3.21 eV) is much higher than that of Li+ ion (0.79 eV
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Composition Dependence of Lithium Diffusion in Lithium Silicide: A Density Functional Theory Study

TL;DR: In this article, the authors used ab initio molecular dynamics to investigate the lithiation process of silicon and found that the Li mobility is strongly dependent on the composition of the LixSi alloys.
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Atomistic simulation of brittle to ductile transition in GaN nanotubes

TL;DR: In this article, the brittle to ductile transition (BDT) was investigated in GaN nanotubes and the corresponding transition temperatures have been determined for different thickness and strain rates.
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Atomic-level study of melting behavior of GaN nanotubes

TL;DR: In this article, the melting temperature of a single-crystalline GaN nanotube with [100]-oriented lateral facets is higher than that with [110]- oriented lateral facets for the same thickness.