다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

The outstanding electrical, mechanical and chemical properties of graphene make it attractive for applications in flexible electronics. However, efforts to make transparent conducting films from graphene have been hampered by the lack of efficient methods for the synthesis, transfer and doping of graphene at the scale and quality required for applications. Here, we report the roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates. The films have sheet resistances as low as approximately 125 ohms square(-1) with 97.4% optical transmittance, and exhibit the half-integer quantum Hall effect, indicating their high quality. We further use layer-by-layer stacking to fabricate a doped four-layer film and measure its sheet resistance at values as low as approximately 30 ohms square(-1) at approximately 90% transparency, which is superior to commercial transparent electrodes such as indium tin oxides. Graphene electrodes were incorporated into a fully functional touch-screen panel device capable of withstanding high strain.

/pdf/roll-to-roll-production-of-30-inch-graphene-films-for-3syrg1ob8a.pdf

Roll-to-roll production of 30-inch graphene films for transparent electrodes

Anodic aluminium oxide (AAO) membranes with hexagonally packed nanochannel arrays have been utilized as a promising template to develop functional nanostructures. The characteristics of the AAO membranes are crucial to...

Organic-inorganic hybrid self-pigmenting effect of anodic aluminium oxide membranes

: Utilizing the short lifetime of hot electrons, ultrasensitive hot-electron photodetectors with fast response speed can be developed that have the potential to carve a niche among the photoconductive devices. Herein, high-performance WSe 2 photodetectors are fabricated based on hot-electron transportation, in which an ultrathin Al 2 O 3 layer enables screening of high-energy hot electrons and promises ultrasensitive response to incident light, and the built-in electric ﬁ eld in Schottky junctions separates the photoinduced carriers for fast transient recovery. The hot-electron photodetectors demonstrated a high recti ﬁ cation ratio of 10 7 and an extremely low dark current of 1 pA/ μ m with a high I light / I dark ratio of 1.8 × 10 6 . Moreover, a high responsivity of 3.69 A/W and detectivity of 2.39 × 10 13 Jones at an incident light power of 5.0 μ W/cm 2 are simultaneously achieved. The present strategy o ﬀ ers an alternative route for ultrasensitive photodetectors with fast response.

Schottky-Contacted WSe 2 Hot-Electron Photodetectors with Fast Response and High Sensitivity

Zinc oxide nanowires are configured as n-channel field effect transistors. These transistors are implemented as highly sensitive chemical sensors for detection of various gases such as O 2 , NO 2 , NH 3 , and CO at room temperature. They show oxidizing sensing property to oxygen and nitrogen dioxide. Nanowires' ammonia sensing behavior is observed to switch from oxidizing to reducing when temperature increased from 300 to 500 K. This effect is attributed to the temperature dependent chemical potential shift. Carbon monoxide is found to increase the nanowire conductance in the presence of oxygen. Due to a Debye screening length comparable to the nanowire diameter, the electric field applied over the back gate significantly affects the sensitivity as it modulates the carrier concentration. A strong negative field is utilized to refresh the sensors by an electro-desorption mechanism. In addition, different chemisorbed species could be distinguished from the refresh threshold voltage and the temporal response of the conductance. These results demonstrate a refreshable field effect sensor with a potential gas identification function.

Chemical sensing with ZnO nanowire FETs

Erratum: “High-performance ZnO nanowire field effect transistors” [Appl. Phys. Lett. 89, 133113 (2006)]

The present invention relates to a gas sensor, and methods of making and using the same. The gas sensor comprises an insulator template, wherein the insulator template comprises a nanotube array formed by opening nanotubes which are arranged in parallel; a sensing material which is at least deposited on the inner surface of the nanotube; and optionally catalyst nanoparticles dispersed on the sensing material. The sensor also includes an electronic controller that activates electrodes made of different conductor materials to obtain a plurality of resistance measurements on the insulator template. The resistance measurements may be compared to a stored resistance profile to determine the gas type, concentration, and mixture in the nanotube array gas sensor.

Zhiyong Fan

Papers

Organic-inorganic hybrid self-pigmenting effect of anodic aluminium oxide membranes

Schottky-Contacted WSe 2 Hot-Electron Photodetectors with Fast Response and High Sensitivity

Chemical sensing with ZnO nanowire FETs

Erratum: “High-performance ZnO nanowire field effect transistors” [Appl. Phys. Lett. 89, 133113 (2006)]

Gas sensor array and manufacturing method therefor