Institute of Engineering and Technology, DAVV

About: Institute of Engineering and Technology, DAVV is a based out in . It is known for research contribution in the topics: Wireless network & Access network. The organization has 80 authors who have published 103 publications receiving 760 citations.

Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of AlmGa1−mN/GaN MODFET

Abstract: A compact and accurate analytical charge control model for finding gate capacitance of Al m Ga 1− m N/GaN MODFET is presented. This temperature dependent model incorporates the effect of strain relaxation, donor neutralization and free carrier generation in the Al m Ga 1− m N layer. Non-linear Fermi potential ( E F )-variation with the sheet carrier concentration ( n s ), and the charge induced in the two-dimensional electron gas (2-DEG) due to highly dominant effects of spontaneous and piezoelectric polarization at the heterojunction of MODFET are also considered. The model is based on closed form expression and does not involve any fitting parameter or elaborate computation. Agreement of calculated data with published simulated/experimental data proves the validity and applicability of the model.

Quality of service parameters in cellular mobile communication

Abstract: With the rapidly changing technologies, customer needs and increased customer awareness, it becomes imperative to review the Quality of Service (QoS) parameters for cellular mobile communication. An important objective of this study is to develop a model of service quality and a set of dimensions forcomparative evaluation, which could provide useful directions to regulators and service providers. The other objective is to critically appraise, categorise and identify issues for further research based on the analysis of literature, covering both the technical and managerial aspects. Finally, a strong need for empirical study using this integrated approach is emphasised.