Meghnad Saha Institute of Technology

About: Meghnad Saha Institute of Technology is a based out in . It is known for research contribution in the topics: MOSFET & Logic gate. The organization has 319 authors who have published 371 publications receiving 2162 citations.

Combining Multiple Feature Extraction Techniques for Handwritten Devnagari Character Recognition

Abstract: In this paper, we present an OCR for handwritten Devnagari characters. Basic symbols are recognized by neural classifier. We have used four feature extraction techniques namely, intersection, shadow feature, chain code histogram and straight line fitting features. Shadow features are computed globally for character image while intersection features, chain code histogram features and line fitting features are computed by dividing the character image into different segments. Weighted majority voting technique is used for combining the classification decision obtained from four multi layer perceptron(MLP) based classifier. On experimentation with a dataset of 4900 samples the overall recognition rate observed is 92.80% as we considered top five choices results. This method is compared with other recent methods for handwritten Devnagari character recognition and it has been observed that this approach has better success rate than other methods.

Thin shell wormholes in higher dimensional Einstein–Maxwell theory

Abstract: We construct thin shell Lorentzian wormholes in higher dimensional Einstein–Maxwell theory applying the ‘Cut and Paste’ technique proposed by Visser. The linearized stability is analyzed under radial perturbations around some assumed higher dimensional spherically symmetric static solution of the Einstein field equations in presence of Electromagnetic field. We determine the total amount of exotic matter, which is concentrated at the wormhole throat.

Healing of burn wounds by topical treatment: A randomized controlled comparison between silver sulfadiazine and nano-crystalline silver

Abstract: Background: Silver sulfadiazine (SSD) has been the standard topical antimicrobial for burn wounds for decades. Recently, nanometer‑sized silver particles are available which have high surface to volume ratio and remain effective even at a very low concentration and minimizes the chance for tissue toxicity due to silver. Hence, we conducted a randomized controlled trial to compare the effectiveness of topical SSD and nano‑crystalline silver (AgNP) hydrogel in burn wounds management. Materials and Methods: Study was conducted in the Burn Unit of IPGMER & SSKM Hospital Calcutta, from January 2011 to August 2012. Patients with 2° burn injury were randomly allocated to SSD and AgNP treatment group. Clinical assessments of burn wound were done on every week till 4th week and on completion of treatment. Results: Data for evaluation were obtained for 54 patients on SSD (2° deep‑dermal cases 27) and 52 (2° deep‑dermal cases 31) on AgNP treatment. Healing status of 2° deep‑dermal burns was more satisfactory for AgNP group than SSD treatment at 4 weeks. Among patients receiving AgNP, 80.6% showed at least 50% healing of 2° deep‑dermal wounds compared to 48.1% on SSD at 4 weeks (P = 0.001). The figures for complete healing at 4 weeks were, respectively, 4% and 0% (P = 0.116). Conclusions: AgNP can be an effective and superior alternative to SSD for burn wounds, particularly 2° deep‑dermal burns. Healing can be expected, in general, in 6 to 8 weeks time, depending upon the extent of body surface involvement.

Analysis of Crosstalk in Single- and Multiwall Carbon Nanotube Interconnects and Its Impact on Gate Oxide Reliability

Abstract: This paper analyses the crosstalk effects in carbon nanotube (CNT) interconnect, and its impact on the gate oxide reliability. Using the existing models of CNT, circuit parameters for the single-wall CNT-bundle and multiwall CNT interconnects are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk-induced overshoot/undershoots have been estimated and the impact of the overshoot/undershoots on the gate oxide reliability in terms of failure-in-time rate is calculated. A similar analysis is performed for Cu-based interconnects and comparisons are made with the results obtained for CNT-based interconnect. It has been found that the CNT-based interconnect is more suitable in VLSI circuits as far as the gate oxide reliability is concerned.