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Institution

Nanosys

Company
About: Nanosys is a based out in . It is known for research contribution in the topics: Quantum dot & Nanowire. The organization has 193 authors who have published 199 publications receiving 13123 citations. The organization is also known as: Nanosys (United States).


Papers
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Journal ArticleDOI
18 Sep 2003-Nature
TL;DR: It is shown that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process and the approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).
Abstract: Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).

1,006 citations

Patent
23 Mar 2006
TL;DR: In this article, a nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrate and medical devices are disclosed.
Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

686 citations

Patent
09 Mar 2010
TL;DR: In this article, methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided, including platelet bindings and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause.
Abstract: Methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided. Hemostatic materials and structures are provided that induce platelet binding, including platelet binding and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause. Example embodiments include platelet binding devices, hemostatic bandages, hemostatic plugs, and hemostatic formulations. The hemostatic materials and structures may incorporate nanostructures and/or further hemostatic elements such as polymers, silicon nanofibers, silicon dioxide nanofibers, and/or glass beads into a highly absorbent, gelling scaffold. The hemostatic materials and structures may be resorbable.

554 citations

Patent
30 Sep 2003
TL;DR: In this article, a thin film of nanowires is formed on a substrate, and contacts are formed at the semiconductor device regions to provide electrical connectivity to the plurality of semiconductor devices.
Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

547 citations

Patent
04 Sep 2003
TL;DR: In this article, Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer, where the nanostructures are not necessarily part of a nanocomposition.
Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

514 citations


Authors

Showing all 201 results

NameH-indexPapersCitations
Xiangfeng Duan11844164214
Costas P. Grigoropoulos7143119015
Chunming Niu5220112966
Robert S. Dubrow30554689
Erik C. Scher28649008
Calvin Y. H. Chow25414920
Hiroshi Iwata231481785
Akihide Shibata211811713
J. Wallace Parce21523372
Chao Liu20262716
D. V. Taylor20353843
Danylo Zherebetskyy19231619
David P. Stumbo19412907
William Blake Kolb1961867
J. Wallace Parce18273925
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
202222
202110
20209
201910
201811