Showing papers by "Sony Broadcast & Professional Research Laboratories published in 1968"

Crystal Magnetic Anisotropy and Magnetization of MnSb

Abstract: Single crystals of MnSb with various Mn compositions in e phase were prepared successfully with Bridgeman method. Magnetization and torque measurements were made on these crystals in temperatures ranging from 4.2°K to 800°K. The temperature dependence of saturation magnetization on the sample with 48.2 at. % Mn was in good agreement with Brillouin function of J =3/2∼2, but the samples with Mn rich composition exhibited slight discrepancies from this function. The saturation magnetization per Mn atom at 0°K in Bohr magneton decreases with increasing Mn composition, and these values are well explained quantitatively as excess Mn atoms with 2.2µ B occupy the B site and these spins are arranged antiparallel to those of A site Mn with 3.5µ B . The temperature dependences of the first order crystal magnetic anisotropy of various Mn compositions exhibit analogous function with those of cobalt and nickel derived from Carr's theory.

System for magnetically recording and reproducing still video pictures and audio information

Abstract: A system for recording and reproducing both still pictures and sounds related to such pictures employs a magnetic tape having index signals at intervals therealong to identify respective portions of the tape which is moved in a predetermined path to bring a selected tape portion to a recording and reproducing station at which video signal and audio signal magnetic heads are moved at relatively high and low speeds, respectively, across the path, preferably obliquely thereto, for scanning respective stripe-like areas on selected tape portion, and the heads are operated during the movement thereof to selectively record and reproduce video and audio signals in the respective stripe-like areas being scanned thereby.

Semiconductor device and a method of making the same

Abstract: Semiconductor device of the field effect transistor type including a first semiconductor region of one conductivity type, a second semiconductor region abutting the first region and containing at least one polycrystalline region and one single crystal region, the polycrystalline region having a conductivity type opposite to that of the first semiconductor region thereby forming a PN junction therealong, and a third semiconductor region formed in the second semiconductor region.

Method of making semiconductor wafer

Abstract: A semiconductor wafer may be made extremely thin, for example, so as to be suitable for use as a solid target of enhanced sensitivity in a vidicon tube, by forming on the marginal portion of one side of a single crystal semiconductor substrate a seeding site which is crystallographically different from the substrate, coating that one side of the substrate with a vapor growth layer of the same conductivity type as the substrate to consist of a polycrystalline region overlying the seeding site and a single crystal region directly overlying the remainder of that side of the substrate, and then removing the semiconductor substrate from the vapor growth layer, as by grinding, to leave a semiconductor wafer of a thickness substantially determined by the thickness of the vapor growth layer and in which cracks that may originate at the edge of wafer, either during grinding or otherwise, are blocked from spreading into the single crystal region at the boundary of the latter with the marginal polycrystalline region. The semiconductor substrate is preferably of a high impurity type so that the concentration of impurity in the single crystal region of the semiconductor wafer produced as aforesaid increases across the thickness of the wafer in the direction toward the surface thereof from which the substrate has been removed.

Magnetic recording and reproducing system with tape-to-head speed control

Abstract: In a magnetic recording and reproducing system in which at least one rotary magnetic head records signals on a magnetic tape in tracks that are skewed or obliquely arranged, the traces of each head are aligned with the recording tracks during playback or reproducing of the recorded signals by generating a reference signal in accordance with the rotational position of the rotary head or heads, envelope-detecting the output of the head or heads, comparing the phases of the envelope-detected output and the reference signal, and, on the basis of such comparison, adjusting the relative position of the tape to the rotary head or heads.

Electrode with a non-woven fabric base and electroplated coatings of nickel

Abstract: A BATTERY ELECTRODE IS COMPOSED OF A POUOUS FABRIC BASE, SUCH AS NON-WOVEN NYLON, ON WHICH THERE IS NONELECTROLYTICALLY PLATED A THIN COATING OF CONDUCTIVE METAL ONTO WHICH THERE IS ELECTROPLATED A RELATIVELY THICK COATING OF METAL, SUCH AS NICKEL, AND THE THUS PLATED BASE THEN HAS AN ACTIVE MATERIAL, SUCH AS NICKEL HYDROXIDE OR CADMIUM HYDROXIDE DEPOSITS IN ITS PORES. AN ELECTRODE TERMINAL MAY BE CONNECTED DIRECTLY TO THE RESULTING ELECTRODE STRUCTURE OF TWO SUCH BASES MAY BE SANWICHED TOGETHER WITH A NICKEL MESH INTERPOSED THEREBETWEEN AND WITH THE ELECTODE TERMINAL ATTACHED TO THE MESH.

Electron Spin Resonance Studies of Trapped Electrons in CdS

Abstract: A resonance line characterized by g // =1.783 and g ⊥ =1.764 was observed at 1.5°K under irradiation of band gap light in undoped CdS. The resonance signal was greatly diminished by annealing the sample in sulfur vapour and was enhanced by annealing it in cadmium vapour at high temperature (∼800°C). The depencence of the resonance intensity on the wavelength of excitation light was measured. The relevant processes involved in excitation and quenching for the resonance signal are discussed in terms of electron transfer from some electron traps via the conduction band and recombination with holes excited from cadmium vacancies into the valence band by the radiation respectively. As a possible model for the magnetic center responsible for the resonance the sulfur vacancy with an unpaired electron is considered. Some results on ENDOR experiments are presented.

Multi-head magnetic recording and reproducing device for video signals featuring head switching in the record mode

Abstract: In a magnetic recording and reproducing device having two rotary magnetic heads for recording and reproducing signals, such as video signals, in skew tracks traced across a magnetic tape by the heads, a switching circuit is provided which, during recording, alternately supplies the video signals to the heads in synchronism with the vertical synchronizing pulses included in the video signals. The video signals thus recorded in successive tracks have overlapping portions which either correspond to a very short recording period of the order of one horizontal period of the video signal and are contained in the vertical blanking period of the signal, or one of such overlapping portions is recorded at a substantially lower level than the other. In reproducing the video signals thus recorded, the outputs of the heads are merely combined.

Metal fuel battery with fuel suspended in electrolyte

Abstract: A METAL FUEL BATTERY CONSISTING OF A LIQUID-CONTAINING CHAMBER, AT LEAST ONE WALL OF WHICH IS A GAS DIFFUSION POSITIVE ELECTRODE INCLUDING A METAL OXIDATION CATALYST THEREIN, A NEGATIVE ELECTRODE POSITIONED IN THE CHAMBER AND SPACED FROM THE POSITIVE ELECTRODE, A LIQUID ELECTROLYTE HAVING A FINELY DIVIDED METAL FUEL POWDER SUSPENDED THEREIN AND MEANS FOR CIRCULATING THE ELECTROLYTE THROUGH THE CHAMBER. D R A W I N G

The "Trinitron" - A New Color Tube

Abstract: A new color picture tube named SONY "TRINITRON" has been developed, based on a concept or electron optics which is different from conventional color picture tubes. "TRINITRON" has a three-beamed-single gun, unlike the conventional picture tubes with three independent electron guns, each of which emits an electron beam in order to produce the respective primary color image on the picture screen. In "TRINITRON", single gun emits simultaneous three electron beams. "TRINITRON" electron optical system comprises a common electron lens system for the three beams and consists of two electron lenses of large aperture openings, with a pair of electron prisms (deflector) for the color convergence. The large aperture electron lens in "TRINITRON" greatly improves the brightness and the sharpness of the picture. In the newly designed electron optical system, three beams pass through the center of this large lens and make pictures brighter and sharper with less aberration. In addition to this new three-beamed single gun, a new color defining mechanism named "APERTURE GRILL" has been developed. It has better beam transparency, which again makes the picture brighter than with the shadow mask; and the "APERTURE GRILL" is as easy to manufacture as the former. Fig. 1 shows a photograph of a 14V" shadow mask tube using the "TRINITRON" electron gun (right) compared with a 14V" shadow mask tube using a conventional 3-gun (left).

Methods of manufacturing semiconductor devices

Abstract: IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, A SEMICONDUCTOR SUBSTRATE HAS A SURFACE THEREOF ETCHED OR OTHERWISE FORMED WITH AT LEAST ONE PROFILED PORTION, SUCH AS, A PROJECTION OR RECESS, HAVING A FACE OFFSET FROM THE SURROUNDING AREAS OF THAT SURFACE AND SIDES EXTENDING FROM THE FACE TO THE ADJACENT SURFACE AREAS, AT LEAST TWO LAYERS OF DIFFERENT CONDUCTIVITY TYPES ARE SEQUENTIALLY DEPOSITED ON THE SUBSTRATE SURFACE BY THE VAPOR GROWTH TECHNIQUE TO COVER AT LEAST THE FACE AND SIDES OF THE PROJECTION OR RECESS, AND EITHER THE SUBSTRATE OR THE OUTERMOST LAYER OF THE RESULTING ELEMENT IS SELECTIVELY REMOVED TO EXPOSE, ADJACENT THE SIDES OF THE PROJECTION OR RECESS,A CROSSSECTION OF AT LEAST THE LAYER WHICH IS CLOSEST THERETO. IN ORDER TO FACILITATE ATTACHMENT OF AN ELECTRODE TO A LAYER AT THE EXPOSED CROSS-SECTION BY INCREASING THE WIDTH OF THE LATTER, THE PLANE TO WHICH MATERIAL IS REMOVED MAY BE DIRECTED OBLIQUELY TO THE SIDES OF THE PROJECTION OR RECESS, AS BY INCLINING THE SIDES, OR THE POSITION OF THE PROJECTION OR RECESS MAY BE SELECTED SO THAT ITS FACE AND SIDES RESPECTIVELY CORRESPOND TO CRYSTAL FACES OF RELATIVELY SMALL AND LARGE CRYSTAL GROWTH SPEEDS. THE EFFECTIVE WIDTH OF A LAYER AT ITS EXPOSED CROSS-SECTION MAY ALSO BE INCREASED BY ALLOYING A PART OF AN ADJACENT LAYER OR THE ADJACENT REGION OF THE SUBSTRATE SO AS TO HAVE THE SAME TYPE CONDUCTIVITY, OR BY APPLYING A LAYER OF THE SAME CONDUCTIVITY TO THE ADJACENT LAYER OR SUBSTRATE ONLY AT THE SIDES OF THE PROJECTION OR RECESS BY EITHER THE DIFFUSION OR VAPOR GROWTH PROCESS.

Method of forming electrical leads for semiconductor device

Abstract: In the method of forming electrical leads for a semiconductor device, an insulating layer is formed on the area of a semiconductor substrate except at the electrode portion of each semiconductor element, and a parting or releasing agent is then coated over the insulating layer and electrical leads for the said respective elements are then fixed to the substrate in the positions where they extend over the semiconductor substrate of another or other elements. The semiconductor substrate is then divided into respective semiconductor elements and as a result, a semiconductor device, in which electrical leads are projecting outwardly from the circumference of the semiconductor element to which the leads are fixed, is provided.

Convergence deflection system for a color picture tube

Abstract: In a color picture tube in which a plurality of beams are made to intersect each other at a location between the beam generating sources and the color screen and are focused on the latter by a main focusing lens positioned to dispose its optical center substantially at the location where the beams intersect so that beams emerge from such lens along divergent paths, first and second spaced plates are disposed at opposite sides of each of the divergent paths to electrostatically deflect the respective beam and cause convergence of all of the beams at a common area on the screen when the first and second plates are at different potentials, a high voltage is generated from a horizontal deflecting pulse provided for causing the beams to scan the screen and such high voltage is applied to an anode electrode of the tube and also to each first plate, and a static convergence deflecting voltage is obtained by dividing the aforementioned high voltage and is applied as the potential difference between the first and second plates by which the respective beam is to be deflected. Further, a dynamic convergence deflecting voltage, comprising both parabolic and sawtooth voltages is generated in response to the horizontal deflecting pulse and is superimposed on the static convergence deflecting voltage with provision being made for separately adjusting both deflecting voltages.

Magnetic head with tape-contacting guard surface and pole tips of similar iron-based materials

Abstract: A magnetic head for video tape recorders having adjacent its ferrite pole tips a guard member of a similar ferrite material providing a tape contact surface having a hardness substantially equal to or a little less than that of the pole tips over the operating temperature range, but which guard material is substantially non-magnetic under working conditions It is preferred to have the physical properties of the material of the guard member such as friction factor, coefficient of thermal expansion and the like similar to those of the pole tip material

Method of forming seeding sites on a semiconductor substrate

Abstract: METHOD FOR LOCATING SEEDING SITES ON A SEMICONDUCTOR SUBSTRATE FOR THE SUBSEQUENT GROWTH OF POLYCRYSTALLINE AREAS THEREON WHICH INVOLVES FORMING A MASKING LAYER OVER THE SUBSTRATE, DEPOSITING A SEMICONDUCTOR MATERIAL IN SELECTED AREAS OF THE MASK IN WHICH THE SEEDING SITES ARE TO BE DEVELOPED, COVERING THE RESULTING ASSEMBLY WITH ANOTHER MASKING LAYER, SELECTIVELY REMOVING PORTIONS OF THE SECOND MASKING LAYER AND THEREAFTER SELECTIVELY REMOVING THE REMAINING PORTIONS OF THE FIRST MASKING LAYER, LEAVING SEEDING SITES COMPOSED OF A SEMICONDUCTOR MATERIAL IN THE PRESELECTED LOCATIONS.

Automatic dark current control system for pickup tubes employing a light inhibiting strip mounted on the pickup tube face plate

Abstract: An automatic dark current control system for a pickup tube including an opaque region provided on the pickup tube face plate, means for detecting an output signal corresponding to the opaque region, and means for controlling a target voltage with the detected signal.

Number and symbol display system

Abstract: IN A NUMBER AND SYMBOL DISPLAY SYSTEM FOR A COMPUTER, THE DIGIT PORTIONS OF A REGISTER ARE SEQUENTIALLY SUPPLIED WITH CODES RESPECTIVELY REPREENTING THE DIGITS OF AN EFFECTIVE NUMBER TO BE DISPLAYED WITH THE CODES REPREENTING ANY FUTILE "0''S" BEING DISTINCTIVE IN RESPECT TO THE CODES REPRESENTING ANY "0''S" IN SUCH EFFECTIVE NUMBER, A DISPLAY DEVICE RESPONDS TO THE SEQUENTIALLY SUPPLIED OUTPUT OF THE REGISTER TO DISPLAY AT ITS RESPECTIVE DIGIT PORTIONS THE DIGITS OF THE EFFECTIVE NUMBER REPRESENTED BY THEIR RESPECTIVE CODES IN THE REGISTER OUTPUT AND AVOIDS THE DISPLAY OF ANY FUTILE "0''S" REPRESENTED BY THEIR DISTINCTIVE CODES, THE DISTINCTIVE CODE IN THE REGISTER OUTPUT IS DETECTED AND, IN RESPONSE TO SUCH DETECTION, A CONTROL OUTPUT SIGNAL IS SUPPLIED TO A DISPLAY DEVICE AT A DIGIT TIME POSITION THAT IS ONE OR TWO DIGIT TIMES LATER THAN THAT OF THE MOST SIGNIFICANT DIGIT OF THE EFFECTIVE NUMBER AS DETERMINED BY THE DETECTED DISTINCTIVE CODE TO CAUSE THE DISPLAY DEVICE TO DISPLAY THE SYMBOL REPRESENTED BY A SUPPLIED SYMBOL CODE IN THE DIGIT POSITIONS HIGHER THAN PLAY DEVICE THAT IS ONE OR TWO DIGIT POSITIONS HIGHER THAN THAT OF THE DIGIT PORTION DISPLAYING THE MOST SIGNIFICANT DIGIT OF THE DISPLAYED EFFECTIVE NUMBER.

An integrated transistor with a polycrystalline contact to a buried collector region

Abstract: Semiconductor devices of the integrated circuit type including contiguous semiconductor regions, portions of these regions containing both a polycrystalline area and a single crystal area.

Misconvergence compensation for single gun,plural beam type color tv picture tube

Abstract: A single-gun, plural-beam-type color television picture tube in which three electron beams representing different color signals are focused by a single lens, after which two of the beams diverge. The two divergent beams are reconverge by convergence deflecting means so they will intersect with the third beam at a common point at a beam-selecting grid, from which point the beams again diverge to impinge on respective color phosphors which together represent a color picture element. Misconvergence, i.e., reconvergence of the two divergent beams to a point other than to the common point of intersection with the third beam, which arises from manufacturing inaccuracies such as the misorientation of the convergence deflecting means with respect to the single electron gun of the tube, or the misorientation of the aperture of the beam-generating means of the tube, is compensated for by the provision of convergence deflecting means which exerts upon at least one of the divergent beams an electric, or Coulomb, force which varies in its direction in accordance with the position at which the beam enters and passes through the convergence deflecting means. Thereby, variations in the direction of the electric force compensates for variations in the position at which the beam is introduced to eliminate the misconvergence which arises from the above-mentioned manufacturing inaccuracies.

Plural beam electron gun for a color picture tube with different-sized control grid apertures

Abstract: In a color picture tube having plural beams emitted from a cathode structure to pass through respective apertures of a control grid structure for intensity modulation and being focused to impinge on respective color phosphors, the relationship of beam currents required for good white balance is achieved by giving a relatively large area to the control grid aperture corresponding to the beam, particularly the green beam, which is to have a relatively high beam current. Preferably, the grid aperture of large area is divided into parts so as to achieve the necessary increased beam current without a corresponding change in the cutoff voltage.