Journal ArticleDOI
Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating Substrates
M. A. Hopkins,J. R. Srour +1 more
TLDR
The results of charge collection measurements on technologically important GaAs devices fabricated on semi-insulating (SI) substrates are described in this article, which suggest that charge funneling in SI GaAs is relatively unimportant compared to that which occurs in semiconducting silicon and GaAs.Abstract:
Results of charge collection measurements on technologically important GaAs devices fabricated on semiinsulating (SI) substrates are described Data are presented which suggest that charge funneling in SI GaAs is relatively unimportant compared to that which occurs in semiconducting silicon and GaAs A qualitative comparison is made of charge collection in silicon and SI GaAs devices to examine their relative susceptibility to single-event upsetread more
Citations
More filters
Journal ArticleDOI
Radiation effects on microelectronics in space
J.R. Srour,J.M. McGarrity +1 more
TL;DR: The basic mechanisms of space radiation effects on microelectronics are reviewed in this article, including the effects of displacement damage and ionizing radiation on devices and circuits, single-event phenomena, dose enhancement, radiation effect on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment.
Journal ArticleDOI
Ion induced charge collection in GaAs MESFETs
A.B. Campbell,Alvin R. Knudson,D. McMorrow,W. Anderson,J.A. Roussos,S. Espy,S. P. Buchner,K. Kang,D. Kerns,S. Kens +9 more
TL;DR: In this paper, the authors show that charge collection in GaAs MESFETs is complex with important implications for modeling SEU (single-event upset) phenomena and developing techniques to mitigate SEU effects.
Journal ArticleDOI
Single-event phenomena in GaAs devices and circuits
D. McMorrow,Todd R. Weatherford,S. P. Buchner,Alvin R. Knudson,Joseph S. Melinger,Lan Hu Tran,A.B. Campbell +6 more
TL;DR: In this paper, the single event upset (SEU) characteristics of GaAs devices and circuits are reviewed in terms of both device-level and circuit-level considerations, where efficient chargeenhancement mechanisms through which more charge can be collected than is deposited by the ion have a significant negative impact on the SEU characteristics of the GaAs ICs.
Journal ArticleDOI
Transient Measurements of Ultrafast Charge Collection in Semicouductor Diodes
TL;DR: In this paper, a high bandwidth sampling system was used to measure the funneling current transients produced in semiconductor devices on a picosecond time scale and compared to the Hsieh, Murley and O'Brien, the McLean and Oldham, and the Messenger models.
Journal ArticleDOI
Gate Charge Collection and Induced Drain Current in GaAs FETs
TL;DR: In this paper, focused electron-beam pulses have been used to study and compare collection of ionization generated charge by the gate and induced drain current in GaAs field-effect transitors.
References
More filters
Journal ArticleDOI
A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
TL;DR: In this paper, the authors studied the transient characteristics of charge collection from alpha-particle tracks in silicon devices and found that when an alpha particle penetrates a pn-junction, the generated carriers drastically distort the junction field and funnels a large number of carriers into the struck junction.
Journal ArticleDOI
Charge Funneling in N- and P-Type Si Substrates
F. B. McLean,T. R. Oldham +1 more
TL;DR: In this paper, a simple phenomenological model of the charge funneling effect is developed based on an effective funnel length and is compared with the experimental results for diffused p+-n and n+-p junctions.
Journal ArticleDOI
Collection of charge from alpha-particle tracks in silicon devices
TL;DR: In this article, the authors investigated the collection process of alpha-particle-generated charge in silicon devices and found that a strong drift field extends far beyond the original depletion layer, and funnels a large number of carriers into the struck node.
Journal ArticleDOI
Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon
T. R. Oldham,F. B. McLean +1 more
TL;DR: In this article, the results of charge collection measurements for heavy ions incident on n-and p-type silicon for a range of doping densities and bias conditions were presented, and it was shown that the collection time increases with ionization density, so that significant recovery of the struck junction may occur during the collection process.