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Charged particle beam exposure system

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TLDR
In this paper, a charged particle beam exposure system consisting of an illumination optical system and a reducing projecting optical system is described. But the authors do not consider the effect of a proximity effect on the performance of the system.
Abstract
A charged particle beam exposure system comprising: a charged particle beam emitting device which generates charged particle beams with which a substrate is irradiated, the charged particle beam emitting device generating the charged particle beams at an accelerating voltage which is lower than that at which an influence of a proximity effect occurs; an illumination optical system which adjusts a beam diameter of the charged particle beams so that density of the charged particle beams is uniform; an character aperture in which an aperture hole is formed in a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beams by an electrostatic field that the charged particle beams have a desired sectional shape and travel towards a desired aperture hole and which returns the charged particle beams passing through the aperture hole to an optical axis thereof; a reducing projecting optical system which forms a multi-pole lens field so that the charged particle beams passing through the character aperture substantially reduce at the same demagnification both in X and Y directions when the optical axis extends in Z directions and form an image on the substrate without forming any crossover between the character aperture and the substrate; and a second deflector which deflects the charged particle beams passing through the character aperture by means of an electrostatic field to scan the substrate with the charged particle beams.

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Citations
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References
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Electron beam lithography system and pattern writing method

TL;DR: In this paper, an electron beam lithography system consisting of an electron gun, an illumination optical system, and a projection optical system was used to produce an image of a desired character of the CP aperture.
Journal ArticleDOI

The electrostatic moving objective lens and optimized deflection systems for microcolumns

TL;DR: In this paper, the authors extended the moving objective lens theory to electrostatic lenses and deflectors, and this can lead to greatly increased deflection field sizes when a vertical landing beam is required.
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Pattern forming apparatus using quadrupole lenses

TL;DR: In this paper, a pattern forming apparatus using a quadrupole lens system to control the cross section of a beam of electrons or ions to be projected onto a plate-like object is described.
Journal ArticleDOI

Initial images with a partially micromachined scanning electron microscope

TL;DR: The focusing properties of a microfabricated silicon electrostatic electron lens have been tested in a machine tool fabricated assembly as discussed by the authors, where images of a 200 mesh gold transmission electron microscopy wire grid at a working distance of 4 mm are obtained in transmission.
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Tri-deflection electron beam system

TL;DR: In this paper, a three-stage E-beam deflection system employs breaking the entire field to be scanned into clusters and sub-fields, where the scanning provided by the first stage is rectilinear and discontinuous with the scan stopping in the center of each of the clusters where an exposure is to be made, and scanning is the same within each cluster from sub-field to subfield.
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