Journal ArticleDOI
Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
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TLDR
In this paper, solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon and the island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times.Abstract:
Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times. Rate equation computer simulation was applied to simulate the experimental obtained nano scale nuclei properties.read more
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Journal ArticleDOI
Diffusion on strained surfaces
TL;DR: In this paper, the change of diffusion kinetics when elastic fields are present is discussed for diffusion on (001) surfaces of simple cubic, fcc and bcc lattices.
Journal ArticleDOI
Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study
K. E. Khor,S. Das Sarma +1 more
TL;DR: In this paper, Monte Carlo simulations were used to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates, and it was shown that islands nucleate with critical nuclei of about one atom and grow two dimensionally until they reach a critical size when it is favorable for the islands to become three dimensional.
Journal ArticleDOI
Investigation of the nucleation and growth of SiC nanostructures on Si
F. Scharmann,P. Maslarski,W. Attenberger,Jörg K. N. Lindner,Bernd Stritzker,Th. Stauden,Jörg Pezoldt +6 more
TL;DR: Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy, the early stages of SiC growth on Si during the carbonisation were investigated in a solid source molecular beam epitaxy equipment as mentioned in this paper.