Journal ArticleDOI
Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth
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In this paper, the authors address the coupled heat transfer and fluid dynamic modeling of the SiC solution growth process, with special attention being paid to the different convective flows in the liquid.About:
This article is published in Journal of Crystal Growth.The article was published on 2010-01-01. It has received 54 citations till now. The article focuses on the topics: Marangoni effect & Heat transfer.read more
Citations
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Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
Kazuhiko Kusunoki,Kazuhiko Kusunoki,Nobuhiro Okada,Kazuhito Kamei,Koji Moriguchi,Hironori Daikoku,Motohisa Kado,Hidemitsu Sakamoto,Takeshi Bessho,Toru Ujihara +9 more
TL;DR: In this paper, a perforated graphite disk called immersion guide (IG) was positioned in the solution in order to control solution flow, which significantly increased the morphological instability and growth rate.
Journal ArticleDOI
Raman scattering from Ti3SiC2 single crystals
TL;DR: In this paper, the authors report the growth of pure Ti3SiC2 single crystals after a careful study of the surface extent through thermodynamical calculations, and an unambiguous assignment of most of the phonon modes has been established, giving an answer to the discrepancies existing in the literature.
Journal ArticleDOI
High-speed prediction of computational fluid dynamics simulation in crystal growth
TL;DR: A rapid prediction of the results of computational fluid dynamics simulations for SiC solution growth using a neural network for optimization of the growth conditions is demonstrated, with a prediction speed 107 times faster than that of a single CFD simulation.
Journal ArticleDOI
Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation
TL;DR: In this paper, a global numerical simulation was performed for the induction heating Top-Seeded Solution Growth (TSSG) process of SiC. The simulation results showed that the contributions of free surface tension gradient and the electromagnetic body force to the melt flow are significant.
Journal ArticleDOI
Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent
TL;DR: In this article, a numerical model with the aim of giving quantitative outcomes in addition to qualitative information was implemented to assist the development of high quality single crystalline SiC ingot using the top seeded solution growth process.
References
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Journal ArticleDOI
Investigation of growth processes of ingots of silicon carbide single crystals
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the possibility of producing silicon carbide single-crystalline ingots from seeds in the 1800 to 2600°C range has been established, which is very promising at low temperatures.
Journal ArticleDOI
On Maintained Convective Motion in a Fluid Heated from below
TL;DR: In this article, the stability in viscous liquid of a steady regime in which the temperature decreases with uniform gradient between a lower horizontal surface which is heated and an upper horizontal surface that is cooled is examined.
Journal ArticleDOI
Three-dimensional time dependent modelling of the marangoni convection in zone melting configurations for GaAs
R. Rupp,Georg Müller,G. Neumann +2 more
TL;DR: In this paper, a quantitative study of the MC in floating zone configurations by a numerical modelling for a large range of Prandtl numbers, 7 × 10-3 < Pr < 5 × 102.
Journal ArticleDOI
Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals
Dieter Hofmann,Matthias H Müller +1 more
TL;DR: In this paper, SiC liquid phase crystallization (solution growth) has been studied in respect of its applicability as manufacturing method of SiC bulk crystals and a specific SiC reactor has been designed and realized which allows SiC growth from Si-solution at high temperatures (T ≥ 2300°C) and high pressures (T≤200 bar) under defined mass transfer control.
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