Journal ArticleDOI
Defect engineering of Czochralski single-crystal silicon
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In this paper, the authors describe modeling efforts based on the dynamics of native point defects in silicon during crystal growth, which are aimed at developing comprehensive and robust tools for predicting microdefect distribution as a function of operating conditions.Abstract:
Modern microelectronic device manufacture requires single-crystal silicon substrates of unprecedented uniformity and purity, As the device feature lengths shrink into the realm of the nanoscale, it is becoming unlikely that the traditional technique of empirical process design and optimization in both crystal growth and wafer processing will suffice for meeting the dynamically evolving specifications. These circumstances are creating more demand for a derailed understanding of the physical mechanisms that dictate the evolution of crystalline silicon microstructure and associated electronic properties. This article describes modeling efforts based on the dynamics of native point defects in silicon during crystal growth, which are aimed at developing comprehensive and robust tools for predicting microdefect distribution as a function of operating conditions. These tools are not developed independently of experimental characterization but rather are designed to take advantage of the very detailed information database available for silicon generated by decades of industrial attention. The bulk of the article is focused on two specific microdefect structures observed in Czochralski crystalline silicon, the oxidation-induced stacking fault ring (OSF-ring) and octahedral voids; the latter is a current limitation on the quality of commercial CZ silicon crystals and the subject of intense research. (C) 2000 Published by Elsevier Science S.A.read more
Citations
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Numerical solutions of partial differential equations by the finite element method, by C. Johnson. Pp 278. £40 (hardback), £15 (paperback). 1988. ISBN 0-521-34514-6, 34758-0 (Cambridge University Press)
Journal ArticleDOI
Gas flow effect on global heat transport and melt convection in Czochralski silicon growth
TL;DR: In this article, a model of global heat transfer in Czochralski (CZ) systems for growth of silicon crystals is presented, allowing a self-consistent calculation of radiative and conductive heat exchange, turbulent melt convection, and inert gas flow.
Journal ArticleDOI
Charged point defects in semiconductors
TL;DR: In this article, the authors present a comprehensive account of semiconductor defect charging, identifying correspondences and contrasts between surfaces and the bulk as well as among semiconductor classes (group IV, groups III-V, and metal oxides).
Journal ArticleDOI
Recent progress of crystal growth modeling and growth control
TL;DR: In this paper, a review of recent progress of numerical modeling in crystal growth through three subjects: (1) hot-zone design, (2) active growth control, and (3) morphological simulation.
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Trends in semiconductor defect engineering at the nanoscale
TL;DR: In this article, the authors describe recent trends in defect engineering across several nano-oriented applications, beginning with Si-based integrated circuits and extending into non-Si microelectronics and especially into oxide semiconductors.
References
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Unified Approach for Molecular Dynamics and Density-Functional Theory
Roberto Car,Michele Parrinello +1 more
TL;DR: In this article, a unified scheme combining molecular dynamics and density-functional theory is presented, which makes possible the simulation of both covalently bonded and metallic systems and permits the application of density functional theory to much larger systems than previously feasible.
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The kinetics of precipitation from supersaturated solid solutions
I.M. Lifshitz,V.V. Slyozov +1 more
TL;DR: In this paper, an analysis is made of the process whereby diffusion effects can cause the precipitation of grains of a second phase in a supersaturated solid solution, and the kinetics of this type of grain growth are examined in detail.
Thermal radiation heat transfer
Robert Siegel,John R. Howell +1 more
TL;DR: In this article, a comprehensive discussion of heat transfer by thermal radiation is presented, including the radiative behavior of materials, radiation between surfaces, and gas radiation, and the use of the Monte Carlo technique in solving radiant exchange problems and problems of radiative transfer through absorbing-emitting media.