Journal ArticleDOI
The mechanism of swirl defects formation in silicon
Reads0
Chats0
TLDR
In this article, the first stage of defect formation is recombination and diffusion of vacancies and self-interstitials in the vicinity of the crystallization front, followed by several successive stages: diffusion of interstitials to the crystal surface, nucleation of primary interstitial clusters, cluster growth, conversion of clusters into other forms (particularly dislocation loops).About:
This article is published in Journal of Crystal Growth.The article was published on 1982-10-01. It has received 498 citations till now.read more
Citations
More filters
Journal ArticleDOI
Point defects, diffusion processes, and swirl defect formation in silicon
Teh Y. Tan,Ulrich Gösele +1 more
TL;DR: In this paper, the authors review the basic experimental and theoretical results which shaped the present knowledge on point defects and diffusion processes in silicon and discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies.
Journal ArticleDOI
Vacancy-type microdefect formation in Czochralski silicon
V.V. Voronkov,R. Falster +1 more
TL;DR: In this paper, the quantitative model of void formation is considered to provide the nucleation temperature, density and size of voids dependent on the starting vacancy concentration and the cooling rate.
Journal ArticleDOI
On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
TL;DR: In this article, a consistent picture of intrinsic point defect behavior is produced by taking into account a wide variety of recent results from studies of silicon crystal growth and high temperature wafer heat treatments.
Journal ArticleDOI
Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers
Nathan Stoddard,Bei Wu,Ian T. Witting,Magnus C. Wagener,Yongkook Park,George A. Rozgonyi,Roger F. Clark +6 more
TL;DR: In this article, a novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells, where monocrystallinity is achievable over large volumes with minimal dislocation incorporation.
Journal ArticleDOI
Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
Vladimir V. Voronkov,R. Falster +1 more
TL;DR: In this paper, a model of multi-step vacancy aggregation in dislocation-free silicon crystals is analyzed, where voids are first nucleated (normally just below 1100°C) and the vacancy loss to voids is retarded below some characteristic temperature (about 1020°C).
References
More filters
Book
Conduction of Heat in Solids
H. S. Carslaw,John Conrad Jaeger +1 more
TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Book
Theory of Dislocations
John Price Hirth,Jens Lothe +1 more
TL;DR: Dislocations in Isotropic Continua: Effects of Crystal Structure on Dislocations and Dislocation-Point-Defect Interactions at Finite temperatures.
Related Papers (5)
Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
Vladimir V. Voronkov,R. Falster +1 more