Journal ArticleDOI
Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons
Shin-ichiro Sato,Haruki Miyamoto,Haruki Miyamoto,Mitsuru Imaizumi,Kazunori Shimazaki,Chiharu Morioka,Katsuyasu Kawano,Takeshi Ohshima +7 more
TLDR
Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2009-06-01. It has received 81 citations till now. The article focuses on the topics: Open-circuit voltage.read more
Citations
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Journal ArticleDOI
Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers
TL;DR: In this paper, two important materials AlGaAs and InAlGaP with their varied thickness (i.e. 0.05-1.0) were investigated using the computational numerical modeling TCAD tool Silvaco ATLAS.
Journal ArticleDOI
A Brief Review of High Efficiency III-V Solar Cells for Space Application
J. Li,A. Aierken,Y. Liu,Y. Zhuang,X. Yang,J. H. Mo,R. K. Fan,Q. Y. Chen,S. Y. Zhang,Y. M. Huang,Q. Zhang +10 more
TL;DR: In this article, the authors summarized the research progress of III-V multijunction solar cells in recent years and presented different types of cell structures, research results and radiation effects of these solar cell structures under different irradiation conditions.
Journal ArticleDOI
Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodes
TL;DR: In this article, the InGaP/GaAs dual-junction (DJ) solar cells were designed by optimizing short-circuit current matching between top and bottom cells using the Silvaco ATLAS.
Journal ArticleDOI
Chebyshev Neural Network-Based Model for Dual-Junction Solar Cells
TL;DR: A novel Chebyshev neural network (ChNN) is proposed to model a dual-junction (DJ) GaInP/GaAs solar cell and it is shown that the ChNN-based models perform better than the commercial software, ATLAS, in predicting the DJ solar cell characteristics.
Journal ArticleDOI
Neural network‐based model for dual‐junction solar cells
TL;DR: This paper proposes NN-based modeling techniques for estimation of behavior of dual-junction GaInP/GaAs solar cells involving complex phenomena, e.g., tunneling effect and complex interactions between the junctions.
References
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Journal ArticleDOI
Damage correlations in semiconductors exposed to gamma, electron and proton radiations
TL;DR: The use of nonionizing energy loss (NIEL) in predicting the effect of gamma, electron, and proton irradiations on Si, GaAs, and InP devices is discussed in this paper.
Journal ArticleDOI
Multi-junction III-V solar cells: current status and future potential
TL;DR: In this paper, a 3-junction InGaP/InGaAs/Ge concentrator solar cell with an efficiency of 37.4% (AM1.5G, 200-suns) has been fabricated.
Journal ArticleDOI
III–V compound multi-junction solar cells: present and future
TL;DR: In this paper, the status of R&D program for super-high-efficiency compound multi-junction (MJ) solar cells in the New Sunshine Project in Japan is presented.
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Modeling solar cell degradation in space: A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches
Scott R. Messenger,Geoffrey P. Summers,Geoffrey P. Summers,Edward A. Burke,Robert J. Walters,M.A. Xapsos +5 more
TL;DR: In this paper, the authors compared the method for predicting solar cell degradation in space radiation environments developed recently at the US Naval Research Laboratory (NRL) is compared in detail with the earlier method developed at the United States Jet Propulsion Laboratory (JPL).
Journal ArticleDOI
Nonionizing energy loss (NIEL) for heavy ions
S.R. Messenger,E.A. Burke,G.P. Summers,M.A. Xapsos,Robert J. Walters,Eric M. Jackson,B.D. Weaver +6 more
TL;DR: In this article, the authors used the Monte Carlo code SRIM to estimate the nonionizing energy loss (NIEL) of heavy ions in the coulombic limit.