Patent
Deposition of transition metal carbides
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TLDR
In this article, a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate, is described.Abstract:
The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.read more
Citations
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References
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Patent
Sequential chemical vapor deposition
TL;DR: In this article, the authors proposed a method for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve.
Patent
Method for producing compound thin films
Tuomo Suntola,Antson J +1 more
TL;DR: In this paper, a method for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first single elements on the surface and then subject the thus formed surface with a first-single element atomic layer thereon to the vapors of a second single element, such that a single-element compound is formed on the substrate bound to the firstsingle element.
Patent
Method and equipment for growing thin films
TL;DR: In this paper, a method and equipment for growing a thin film onto a substrate, in which a substrate placed in a reaction space (1) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin-film.
Patent
Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors
TL;DR: In this paper, an apparatus for and a method of growing thin films of the elemental semiductors (group IVB) using modified atomic layer epitaxial (ALE) growth techniques is described.
Journal ArticleDOI
Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction
TL;DR: In this paper, a sequence of self-limiting surface reactions was used to grow tungsten films with atomic layer control using a novel sequence of Self-Limiting Surface Reactions (SRL).