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Disposable hard mask for phase shift photomask plasma etching

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TLDR
In this article, a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomasks by minimizing the affect of macro and micro loading is described.
Abstract
A method for creating a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the phase shift photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches opaque material (and anti-reflective layer, if used) and phase shift layers.

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Patent

Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same

TL;DR: In this article, a method and apparatus for process integration in the manufacture of a photomask is described, including a vacuum transfer chamber coupled with at least one hard mask deposition chamber and a plasma chamber configured for etching chromium.
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Photomask producing method and photomask blank

TL;DR: In this paper, a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, an etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film.
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TL;DR: In this paper, a method and apparatus for process integration in the manufacture of a photomask is described, including a vacuum transfer chamber coupled with at least one hard mask deposition chamber and a plasma chamber configured for etching chromium.
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Methods for etching photolithographic reticles

TL;DR: In this paper, a method and apparatus for etching an optically transparent layer disposed on a substrate, such as a photolithographic reticle, is provided, where the reticle comprises a patterned metal photomask layer formed on a transparent material, and a patterning resist material deposited on the patterned polysilicon material, introducing fluorine containing hydrocarbons and one or more chlorine-containing gases into the processing chamber.
References
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Patent

Straight sidewall profile contact opening to underlying interconnect and method for making the same

TL;DR: In this article, an etch stop layer is used between a conductor layer and a dielectric layer to eliminate resputtering of the underlying conductor material which prevents tapering of the etched opening.
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Photomask used by photolithography and a process of producing same

TL;DR: In this paper, the use of a phase shifter which does not resolve under an optical projection system shields a large size area against an irradiated light, thereby allowing the formation of fine, intricate patterns suitable for use in LSIs.
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Phase shift mask and manufacturing method thereof

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Photo mask and method for manufacturing same

TL;DR: In this article, a photo mask is used to increase the capacitance of a capacitor by improving the proximity effect of a mask pattern, which is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the mask pattern.
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TL;DR: In this paper, a reliable interconnection pattern is formed by depositing first and second conductive layers, etching to form a conductive pattern in the first conductive layer and then forming an interconnection comprising a portion of the second layer.
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