Patent
Dry etching method
Katsuragi Masaru,Horio Masahiro +1 more
TLDR
In this article, the authors proposed a method to obtain a selection ratio nearly equal to the one in the case where a silicon oxide film is used as mask material, by previously adding organic material having unsaturated bonds to etching gas.Abstract:
PURPOSE:To obtain a selection ratio nearly equal to the one in the case where a silicon oxide film is used as mask material, by previously adding organic material having unsaturated bonds to etching gas. CONSTITUTION:When dry etching is performed, in order to form contact holes and the like with a reactive ion etching equipment, by using a silicon oxide film as a mask, MMA (methacrylate methyl) being organic material having unsaturated bonds is added to etching gas. The organic material produces a polymerized film preventing the etching of substrate silicon, on the substrate silicon. Hence the decrease of the selection ratio of the silicon oxide film to the substrate silicon is avoided, and further the hole diameter dependency of the selection ratio can be decreased.read more
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Patent
Self-cleaning etch process
Xue-Yu Qian,Zhi-Wen Sun,Weinan Jiang,Arthur Y. Chen,Gerald Zheyao Yin,Ming-Hsun Yang,Ming-Hsun Kuo,David Mui,Jeffrey D. Chinn,Shaoher X. Pan,Xikun Wang +10 more
TL;DR: In this paper, a process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, nonhomogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etch chamber 30 is presented.
Patent
Two-stage etching process
TL;DR: In this article, a process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages, in the first stage, an energized first process gas is provided in the chamber, and in the second stage, a more energized second process gas, consisting of CF 6 and Ar, is provided.
Patent
Method for anisotropically etching tungsten using SF6, CHF3, and N2
TL;DR: In this paper, a method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropic, with good etching selectivity, and without forming excessive passivating deposits on the etched features is presented.
Patent
Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
TL;DR: In this paper, a method for etching tungsten or tungststen nitride was proposed, which permits precise etch profile control while providing excellent selectivity, of at least 175:1, for example, in favor of etching a gate electrode rather than an adjacent oxide layer.
Patent
Manufacturing method of semiconductor device
TL;DR: In this paper, the problem of improving a surface protecting film in adhesion to a BLM film when solder balls are rearranged in Q flip chip bonding method is solved, where a wafer is heated to remove moisture contained in a first polyimide film 4 before the BLM films 6a and 6b are formed through sputtering.