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Journal ArticleDOI

Electrical Properties of ZnO‐Bi2O3 Ceramics

William G. Morris
- 01 Jul 1973 - 
- Vol. 56, Iss: 7, pp 360-364
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TLDR
In this paper, the nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi2O3 were measured.
Abstract
The nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi2O3 were measured. Many of the electrical properties are related directly to the microstructure, which consists of conductive ZnO grains separated by a continuous amorphous Bl2O3, phase. The origin of the nonlinear conduction in the intergranular phase was confirmed by experiments with evaporated thin films. The proposed conduction mechanism in varistors containing ZnO and Bi2O3 is a combination of hopping and tunneling in the amorphous phase.

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Citations
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Journal ArticleDOI

Application of Zinc Oxide Varistors

TL;DR: In this paper, the application of ZnO varistors has been treated in a systematic way in the literature and a detailed description of these parameters and their relation to microstructure and the processing of the varistor is provided.
Journal ArticleDOI

Theory of conduction in ZnO varistors

TL;DR: In this article, a theory was presented which quantitatively accounts for the important features of conduction in ZnO-based metaloxide varistors, which predicts a varistor breakdown voltage of 3.2 V/grain boundary for n0=1017 carriers' cm−3 and T=300 K.
Journal ArticleDOI

The physics of metal oxide varistors

TL;DR: In this paper, the authors present an understanding of the conduction mechanisms and physical processes relevant to the performance of ZnO-based ceramic varistors and show that the qualitative features of highly nonlinear conductivity are largely independent of the details of varistor composition or processing but rather appear to be a general effect engendered by a microstructure of conducting grains surrounded by thin insulating oxide barriers.
Journal ArticleDOI

Capacitance‐vs‐voltage characteristics of ZnO varistors

TL;DR: In this paper, the capacitance-vs-voltage characteristics of ZnO varistors which contain rare earth metal oxides and cobalt oxide were studied on the basis of the symmetrical Schottky-barrier model of the grain boundary region.
Journal ArticleDOI

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

TL;DR: Grain growth in high-purity ZnO with Bi2O3 additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air.
References
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Journal ArticleDOI

On the Dispersion of Resistivity and Dielectric Constant of Some Semiconductors at Audiofrequencies

C. G. Koops
- 01 Jul 1951 - 
TL;DR: In this paper, the ac resistivity and the apparent dielectric constant of the material show a dispersion which can be explained satisfactorily with the help of a simple model of the solid: there should be wellconducting grains separated by layers of lower conductivity.
Journal ArticleDOI

Electronic properties of amorphous dielectric films

TL;DR: In this paper, the effect of the amorphous and glassy structure of most dielectric films on their electrical characteristics is discussed with reference to experimental results obtained, in particular, with ammorphous germanium.
Book ChapterDOI

Electronic Processes in Zinc Oxide

TL;DR: In this paper, the electronic processes in zinc oxide are discussed, and the applications which depend in a direct way on the electronic process in ZnO are discussed in detail, including its use as a catalyst and as photocatalyst for a series of chemical reactions.
Journal ArticleDOI

Polymorphism of Bismuth Sesquioxide. II. Effect of Oxide Additions on the Polymorphism of Bi2O3.

TL;DR: Only the monoclinic and the cubic forms of Bi2O3 were found to be stable, and other phases, frequently reported by previous investigators, such as tetragonal and body-centered cubic (b. c.c.c.), were shown to form metastably from cooled liquid or cubic.
Journal ArticleDOI

Sintering of ZnO: I, Densification and Grain Growth

TL;DR: In this article, the densification and grain growth rate of pure MgO powder compacts are measured between 1450 and 1650°C in air and applied to the lattice diffusion model to calculate diffusion coefficients in fair agreement with the directly measured diffusion coefficients for magnesium.