Journal ArticleDOI
Electrically active point defects in cadmium telluride
TLDR
Hall coefficient and conductivity measurements were made on single crystals of CdTe at temperatures up to 950°C while controlling the partial pressure of either cadmium or tellurium as discussed by the authors.Abstract:
Hall coefficient and conductivity measurements were made on single crystals of CdTe at temperatures up to 950°C while controlling the partial pressure of either cadmium or tellurium. Measurements made with a cadmium reservoir showed the material to ben-type due to the presence of a doubly ionized native donor, in agreement with the results of Whelan and Shaw. The apparent enthalpy of formation of the donor and its concentration along the cadmium-rich solidus were obtained. Measurements made with a tellurium reservoir close to tellurium saturation are in disagreement with the usual model, which attributes formation ofp-type material under these conditions to the presence, of a native acceptor defect. The results are consistent with a hole concentration originating from an excess of acceptor impurities rather than from a native acceptor.read more
Citations
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Journal ArticleDOI
Light-emitting diodes
A. A. Bergh,P. J. Dean +1 more
TL;DR: In this paper, a survey of prominent applications for various LEDs is presented, with an emphasis on the III-V semiconducting compounds and GaP LEDs in particular, including photometry, the physics of electrical injection and luminescence.
Journal ArticleDOI
Electron Mobility in II-VI Semiconductors
TL;DR: In this paper, the electron drift mobility in CdS, CdSe and ZnTe is calculated by an iterative solution of the Boltzmann equation for lattice scattering, and the acoustic deformation potential appropriate to acoustic-mode scattering appears to be much higher than previously expected.
Book ChapterDOI
Chapter 1 Low-Field Electron Transport
TL;DR: In this paper, the electron transport in crystals subjected to small driving forces, that is, low-field transport, has been studied and extensive data have become available on many of the III-V and II-VI compounds, and detailed comparisons between theoretical and experimental results permit the construction of a generally satisfactory picture of electron physics of these crystals.
Journal ArticleDOI
Efficient calculation of carrier scattering rates from first principles.
Alex M. Ganose,Junsoo Park,Alireza Faghaninia,Rachel Woods-Robinson,Rachel Woods-Robinson,Kristin A. Persson,Anubhav Jain +6 more
TL;DR: A computationally efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs is developed, enabling its use in high-throughput computational workflows for the accurate screening of carrier mobilities, lifetimes, and thermoelectric power.
References
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Journal ArticleDOI
Some Properties of a Double Acceptor Center in CdTe
Journal ArticleDOI
On the Electrical and Optical Properties of p-type Cadmium Telluride Crystals
TL;DR: In this paper, the authors measured the electrical and optical properties of p-type synthetic CdTe single crystals and found that the intrinsic energy gap is about 1.43 e.v.
Journal ArticleDOI
Cyclotron Resonance in Cadmium Telluride
Journal ArticleDOI
Evidence of a Doubly Ionized Native Donor in CdTe
R. C. Whelan,D. Shaw +1 more
TL;DR: The electrical conductance of CdTe has been measured in the temperature range 490 to 950 °C as a function of the ambient partial pressure of cd, pCd as mentioned in this paper, and was interpreted in terms of a doubly ionized native donor whose associated ionization energy was estimated to be ≦ 0.24 eV.