Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

TLDR: The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O2+ ions in Si (111) with subsequent annealing are investigated in this article.

Abstract: The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O2+ ions in Si (111) with subsequent annealing are investigated. It is established that at high ion implantation doses (D ≥ 6 × 1016 cm−2), continuous homogeneous polycrystalline SiO2 films form, while at relatively low doses (D = 8 × 1015−4 × 1016 cm−2), SiO2 films with regularly arranged Si nano-areas with a density of 1010–1011 cm−2 form.