Pascal Normand

TL;DR: In this article, a monolayer of organically passivated gold nanoparticles has been incorporated into a metal-insulator-semiconductor (MIS) structure, which exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions.

TL;DR: In this article, the potential of thin SiO2 oxides implanted by very low energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices.

TL;DR: By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms.

TL;DR: In this paper, it was shown that two-dimensional arrays of Si nanocrystals cannot be positioned closer than 5 nm to the channel by increasing the implantation energy, and that injection distances down to much smaller values can be achieved only by decreasing the nominal thickness of the gate oxide.

TL;DR: A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO2 on top of a p-(001)Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid thermal processing and characterized structurally and electrically as mentioned in this paper.