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Patent

Fabry-perot modulator

TLDR
In this article, the authors proposed an asymetric Fabry-Perot (FP) modulator, which includes a quantum well structure having wider (approximately 150A) than usual (about 100A) wells.
Abstract
An asymetric Fabry-Perot (FP) modulator includes a quantum well structure having wider (approximately 150A) than usual (about 100A) wells. The FP cavity has a resonance at a wavelength of an excitonic absorption peak of the QW structure. Although the maximum change in absorption under applied bias is less with 150A wells than with 100A wells, the characteristics of the electroabsorption are also altered, with the result that the largest change occurs at the wavelength of the band-edge el-hhl exciton at zero bias. Absorption can be reduced by biasing the QW and hence the AFPM can have a normally-off (zero bias, zero reflectivity) characteristic. Such an arrangement makes possible higher contrast modulation and/or lower operating voltages. The FP modulator may be used in SEEDs.

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Citations
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References
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Patent

Electro-optical device

Norman Absley
TL;DR: In this article, an electro-optical device is arranged as a Fabry Perot etalon (10) comprising two mirrors (18,24) and a central region (22).
Journal ArticleDOI

Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors

TL;DR: In this article, an asymmetric Fabry-Perot reflection modulator with an on/off ratio of 22, insertion loss of 3.7 dB, and bandwidth of 4.4 nm for an operating voltage swing of 11 V was reported.
Patent

Nonlinear and bistable optical device

TL;DR: In this article, a means responsive to light for generating a photocurrent, a structure having a semiconductor quantum well region, and a mean responsive to the photocurrent for electrically controlling an optical absorption of the semiconductor well region.
Journal ArticleDOI

Quantum Wells For Optical Information Processing

TL;DR: The quantum-confined Stark effect (QCSE) as mentioned in this paper is a well-known phenomenon in semiconductor devices that enables electrically controlled optical modulators and optically controlled self-electro-optic effect devices that can operate at high speed and low energy density.
Journal ArticleDOI

Extremely low-voltage Fabry-Perot reflection modulators

TL;DR: In this paper, a surface-normal Fabry-Perot reflection modulator with a reflection change of 47% for an operating voltage swing of only 2 V, i.e. 23%/V, is discussed.