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Proceedings ArticleDOI

Free carrier absorption in Sn based Group-IV alloys

TLDR
In this paper, the free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn were estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings.
Abstract
The free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn are estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings. The change in absorption coefficient for different Sn concentration in the alloys is also reported.

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