Journal ArticleDOI
Piezo-spectroscopic determination of the ratio of electron—To phonon to hole—To phonon interaction in silicon
TLDR
In this paper, the authors investigated the stress-dependence of the normalized wavelength-modulated absorption spectra of TO-phonon assisted indirect transition in silicon at 77 K.About:
This article is published in Solid State Communications.The article was published on 1978-10-01. It has received 3 citations till now. The article focuses on the topics: Silicon & Phonon.read more
Citations
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Journal ArticleDOI
Band structure properties, phonons, and exciton fine structure in 4 H -SiC measured by wavelength-modulated absorption and low-temperature photoluminescence
TL;DR: In this article, the authors measured the wavelength-modulated absorption (WMA) spectrum of $4H$-SiC over a broader wavelength range (3500--3800 ) and at a higher resolution than in previous work.
Book ChapterDOI
Intervalley Electron-Phonon and Hole-Phonon Interactions in Semiconductors: Experiment and Theory
TL;DR: In this article, the authors discuss various piezospectroscopic experiments that have been performed on Si (Γ-Δ),3 GaP(γ-X)1,11, and Ge (γ-L)4, combined with previously measured values of the absorption coefficient, can be used to evaluate the EP and HP scattering matrix elements for the TO phonon in Si2 and the LA and TA phonons in GaP2,11.
References
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Journal ArticleDOI
Energy-Band Structure of Germanium and Silicon: The k·p Method
Manuel Cardona,Fred H. Pollak +1 more
TL;DR: In this paper, the energy bands of germanium and silicon, throughout the entire Brillouin zone, have been obtained by diagonalizing a k\ifmmode\cdot\else\textperiodcentered\fi{}p Hamiltonian referred to 15 basis states at k=0.
Journal ArticleDOI
Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
TL;DR: In this paper, the indirect optical absorption edge in silicon and germanium has been studied in the presence of shear strain and the results have been interpreted in terms of changes in the valence and conduction-band structure with strain.
Journal ArticleDOI
Effects of Uniaxial Stress on the Indirect Exciton Spectrum of Silicon
TL;DR: In this paper, the authors measured the stress dependence of the indirect exciton spectrum of silicon at 77.5 K for static uniaxial compression along the [111], [001], and [110] directions with light polarized parallel and perpendicular to the stress direction, using wavelength modulation.
Journal ArticleDOI
Temperature dependence of the relative integrated intensities of symmetry-allowed phonon-assisted exciton emission in Si and Ge
D. L. Smith,T. C. McGill +1 more
TL;DR: In this article, a model based on a splitting of the exciton ground state combined with different transition rates for the split exciton levels was developed to interpret the observed temperature dependence of the relative intensities of symmetry-allowed phonon-assisted exciton emission in Si and Ge.
Journal ArticleDOI
Determination of the mass-anisotropy exciton splitting in silicon
TL;DR: In this article, the fundamental exciton in Si was determined by application of weak [001] deformations, bringing the components separately into light, and subsequent extrapolation to the zero-stress limit.
Related Papers (5)
Calculation of the Γ-L electron-phonon and hole-phonon scattering matrix elements in germanium
O. J. Glembocki,Fred H. Pollak +1 more