Free Carrier Faraday Effect in n-Type InSb with a Submillimeter-Wave Laser

TLDR: In this article, the free carrier Faraday rotation and ellipticity in n-type InSb have been measured at 105°K by the use of an HCN laser of 337 µm in the range of magnetic field including cyclotron resonance.

Abstract: Free carrier Faraday rotation and ellipticity in n-type InSb have been measured at 105°K by the use of an HCN laser of 337 µm in the range of magnetic field including cyclotron resonance. The experimental results were in good agreement with the classical theory based on the Drude free electron model except in the vicinity of the cyclotron resonance field. The effective mass, the density and the relaxation time of conduction electrons were determined simultaneously only from the Faraday rotation by means of the best fit method. Near the cyclotron resonance field, the Faraday ellipticity showed a considerable discrepancy between measured and calculated values, which has not been explained even by considering the nonparabolicity of energy bands.