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Journal ArticleDOI

Frequency domain analysis of analog single-event transients in linear circuits

TLDR
In this paper, the relationship between the frequency spectrum of a single-event transient (SET) stimulus and the frequency response of internal circuit blocks of typical operational amplifier architectures has been performed.
Abstract
Using frequency-domain analysis techniques, a study of the relationship between the frequency spectrum of a single-event transient (SET) stimulus and the frequency response of internal circuit blocks of typical operational amplifier architectures has been performed. Results explain several general analog SET (ASET) observations, including the relative importance of the stimulus temporal profile, the circuit bandwidth, and the ion strike location relative to major circuit modules. Benefits gained from frequency compensation are evident, as important filtering of high-frequency signal components occur, reducing detrimental effects on the operation of the circuit.

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Citations
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Journal ArticleDOI

Three-dimensional mapping of single-event effects using two photon absorption

TL;DR: In this paper, carrier generation based on subbandgap two-photon absorption is used to perform three-dimensional mapping of the single-event transient response of the LM124 operational amplifier.
Journal ArticleDOI

Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation

TL;DR: In this article, a good agreement was obtained between the single event output voltage transient waveforms obtained by exposing individual circuit elements of a bipolar comparator and operational amplifier to an ion microbeam, a pulsed laser beam, and circuit simulations using SPICE.
Journal ArticleDOI

Single-Event Transients in Bipolar Linear Integrated Circuits

TL;DR: In this article, single-event transients (SETs) in linear integrated circuits have caused anomalies in a number of spacecraft and the consequences of these anomalies have spurred efforts to better understand SETs, including the mechanisms responsible for their generation, the best approaches for testing, how data should be analyzed and presented, and approaches for mitigation.
Journal ArticleDOI

Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis

TL;DR: In this article, a transistor-level circuit model of the LM124 operational amplifier specifically engineered and calibrated for analog single-event transient (ASET) computer simulations is presented, relying heavily on datasheet specifications for electrical parameterization and experimental laser probing for dc and transient calibration.
Journal ArticleDOI

Radiation Effects in Power Systems: A Review

TL;DR: In this article, a review of common radiation issues related to power converters, which are the main design blocks of current space power system architectures, is presented, as well as a status of emerging technologies under consideration for the next-generation of space power systems.
References
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Journal ArticleDOI

Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies

TL;DR: In this article, an evaluation of the pulsed laser as a technique for single events effects (SEE) testing is presented, where the important optical effects, such as laser beam propagation, surface reflection, and linear and nonlinear absorption, determine the nature of laser-generated charge tracks in semiconductor materials.
Journal ArticleDOI

Analysis of single-event transients in analog circuits

TL;DR: In this article, a new methodology for understanding single-event transient (SET) phenomena in analog circuits is described, where device and circuit simulation techniques are coupled in order to reproduce experimental data obtained from the National Semiconductor LM124 operational amplifier and to determine the most sensitive parts of the integrated circuit.
Journal ArticleDOI

Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

TL;DR: In this paper, a quantitative correlation is observed between the laser single-event upset and single event latchup threshold measurements and those performed using accelerator-based heavy ion testing methods, revealing the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts.
Journal ArticleDOI

Observation of single event upsets in analog microcircuits

TL;DR: In this paper, the OP-15 operational amplifier has been found to be susceptible to single event upsets in the laboratory and has also experienced upset in space, and possible strategies for mitigating the occurrence of analog SEUs in space are also discussed.
Proceedings ArticleDOI

Observation of heavy ion induced transients in linear circuits

TL;DR: In this article, the authors present data which confirm Dr. Koga's findings and show that heavy ion induced transients are responsible for anomalies in the Earth Sensor of NASA/CNES TOPEX/POSEIDON satellite.
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