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Patent

Gallium nitride-based compound semiconductor light-emitting device and method for making the same

Makoto Tamaki, +1 more
TLDR
A light-emitting device comprises an n-type layer made of an ntype gallium nitride-based compound of the formula Alx Ga1-x N, wherein 0≦X < 1, and an i-type surface made of a semi-insulating I-type compound semiconductor and doped with a p-type impurity for junction with the ntype layer as mentioned in this paper.
Abstract: 
A light-emitting device comprises an n-type layer made of an n-type gallium nitride-based compound of the formula Alx Ga1-x N, wherein 0≦X<1, and an i-type layer formed on the n-type layer and made of a semi-insulating i-type gallium nitride-based compound semiconductor and doped with a p-type impurity for junction with the n-type layer. A first electrode is formed on the surface of the i-type layer and made of a transparent conductive film and a second electrode is formed to connect to the n-type layer through the i-type layer. The device is so arranged that light is emitted from the side of the i-type layer to the outside. When an electric current is supplied to the first electrode from a wire contacted thereto, the first electrode is held entirely at a uniform potential. Light is emitted from the entire interface beneath the first electrode and can thus be picked up from the first electrode which is optically transparent.

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Patent

Light-radiating semiconductor component with a luminescence conversion element

Ulrike Reeh, +6 more
TL;DR: In this article, a light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element, which converts a portion of the radiation into radiation of a longer wavelength.
Patent

Nitride semiconductor device

Shinichi Nagahama, +2 more
TL;DR: In this paper, the super lattice structure of a light emitting device (LED) was proposed to make working current and voltage of the device lower, resulting in realization of more efficient devices.
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Solid state white light emitter and display using same

Bruce H. Baretz, +1 more
TL;DR: In this paper, a light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid-state device to emit from the device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to the radiation, is presented.
Patent

Double heterojunction light emitting diode with gallium nitride active layer

John A. Edmond, +1 more
TL;DR: In this paper, a double heterostructure for a light emitting diode consisting of a layer of aluminum gallium nitride having the first conductivity type, a layer with the opposite conductivities, and an active layer of gallium-nitride between the two layers is presented.
Patent

Light emitting device package

Jong-Kil Park, +4 more
TL;DR: A light-emitting device package including: a package main body including a cavity and a lead frame including a mounting portion disposed in the cavity, and a plurality of terminal portions; a light emitting device chip mounted on the mounting portion; a pluralityof bonding wires for electrically connecting the plurality of terminals and the light emitting device chip; and a light-transmitting encapsulation layer filled in the cavities.
References
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Patent

Process of vapor growth of gallium nitride and its apparatus

Katsuhide Manabe, +4 more
TL;DR: In this paper, a process and apparatus for the growth of a gallium nitride group semiconductor (Alx Ga1-x N; inclusive of x=0) thin film using an organometallic compound gas is described.
Patent

Substrate for growing gallium nitride compound-semiconductor device and light emitting diode

Katsuhide Manabe, +4 more
TL;DR: A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate.
Patent

Process for growing III-V compound semiconductors on sapphire using a buffer layer

Isamu Akasaki, +1 more
TL;DR: In this paper, an organometallic vapor phase hetero-epitaxial process for growing Al x Ga 1-x N films on a sapphire substrate is described.
Patent

PLANAR GaN ELECTROLUMINESCENT DEVICE

N Braslau, +3 more
TL;DR: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.
Patent

Transparent electrode light emitting diode and method of manufacture

David J. Lawrence, +3 more
TL;DR: In this article, a transparent electrode is used to couple current to the light emitting diode junction in a manner that minimizes the resistance at the interface between the transparent electrode and semiconductor diode material.