Journal ArticleDOI
Growth, properties and applications of HgCdTe
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TLDR
A review of the methods used to grow HgCdTe with a summary of some of its basic properties and applications can be found in this article, where the fundamental properties discussed briefly are those of prime interest to detector manufacturers: energy gap, intrinsic carrier concentration, and electrical activity of dopants.About:
This article is published in Journal of Crystal Growth.The article was published on 1983-12-02. It has received 74 citations till now. The article focuses on the topics: Metalorganic vapour phase epitaxy & Molecular beam epitaxy.read more
Citations
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Journal ArticleDOI
Intrinsic infrared detectors
Antoni Rogalski,Jozef Piotrowski +1 more
TL;DR: In this article, the authors classified infrared detectors into three categories: 1.1. General classification of infrared detectors 2.2. Photoconductive detectors, 2.3.3, and 2.4.
Journal ArticleDOI
Near room-temperature IR photo-detectors
Journal ArticleDOI
Models for convection and segregation in the growth of HgCdTe by the vertical Bridgman method
Do Hyun Kim,Robert S. Brown +1 more
TL;DR: In this paper, a detailed analysis of heat transfer, convection, and species transport in the vertical Bridgman growth of Hg(1-x)Cd(x)Te was performed by numerical analysis of an idealized quasi-steady state model of the system.
Book ChapterDOI
Advances in Infrared Detector Array Technology
TL;DR: In this article, the authors cover recent advances in Short Wavelength Infrared (SWIR), Medium Wave Length Infrared(MWIR) and Long wavelength infrared (LWIR) materials and device technologies for a variety of defense and commercial applications.
Journal ArticleDOI
The Travelling Heater Method (THM) for Hg1−xCdxTe and related materials
TL;DR: The Travelling Heater Method (THM) is considered the most viable MCT bulk growth method that simultaneously meets the requirements of large area, uniform composition, low defects density, and a well defined crystalline orientation.
References
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Journal ArticleDOI
Energy gap versus alloy composition and temperature in Hg1−xCdxTe
TL;DR: In this article, the authors used the data from 22 different studies to derive a new empirical expression for the energy band gap (Eg) of Hg1−xCdxTe: Eg =−0.302+1.832x3.
Journal ArticleDOI
Preparation and properties of HgTe and mixed crystals of HgTe-CdTe
TL;DR: The elements mercury, cadmium, and tellurium have been purified, and crystals of the compounds CdTe and HgTe, and of the mixed compounds cdTe-HgTe have been prepared as mentioned in this paper.
Journal ArticleDOI
Calculation of intrinsic carrier concentration in Hg1−xCdxTe
G. L. Hansen,J. L. Schmit +1 more
TL;DR: In this paper, the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg were used to calculate the intrinsic carrier concentration in Hg1−xCdxTe.
Journal ArticleDOI
The growth by MOVPE and characterisation of CdxHg1−xTe
Stuart J. C. Irvine,J.B. Mullin +1 more
TL;DR: In this paper, a preliminary survey of epitaxial layers grown on CdTe oriented 2° off (100) revealed a rough surface finish for HgTe but smooth surfaces for compositions above x = 0.2.
Journal ArticleDOI
Effects of annealing on the electrical properties of CdxHg1−xTe
TL;DR: In this article, the defect/impurity balance in CdxHg1−xTe with 0.17
Related Papers (5)
Hg1−xCdxTe‐Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications
M. A. Herman,M. Pessa +1 more