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Journal ArticleDOI

H-center interactions during thermal annealing in KBr

M. Saidoh, +1 more
- 01 Jul 1973 - 
- Vol. 34, Iss: 7, pp 1165-1171
TLDR
In this paper, the formation of the V4-center and the HA-center during thermal annealing in pure and Na+- and Li+-doped KBr, X-irradiated at low temperatures, is studied.
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This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1973-07-01. It has received 44 citations till now. The article focuses on the topics: Annealing (metallurgy).

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Citations
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Optical Effects of Ion Implantation

TL;DR: In this article, the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies.
Journal ArticleDOI

Creation of lattice defects by electronic excitation in alkali halides

TL;DR: In this article, a review of the dominant mechanisms for defect formation in alkali halides with particular attention paid to the identification of the precursor state, the excited state of the self-trapped exciton.
Journal ArticleDOI

Methods for kinetic analysis of thermally stimulated processes

TL;DR: Several methods are known for the evaluation of the main kinetic parameters related to a thermoluminescence (TL) curve, namely the activation energy, the preexponential factor and the kinetic order as discussed by the authors.
Journal ArticleDOI

Formation of interstitial-vacancy pairs by electronic excitation in pure ionic crystals

TL;DR: In this article, a review of defect formation induced by electronic excitation is presented, with a focus on the microscopic mechanism of F-H pair formation in alkali halides and relevant phenomena in other systems such as alkaline earth fluorides, amorphous silicon dioxide and other materials.
References
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Journal ArticleDOI

Radiolysis of alkali halides

TL;DR: A review of the extensive work pertaining to the creation of color centers in alkali halides can be found in this paper, where a brief historical survey of the various mechanisms put forth to account for defect creation are examined in turn and the experimental evidence which supports or belies each of these is presented.
Journal ArticleDOI

Transient Formations of Color Centers in KBr Crystals under the Pulsed Electron Beam

TL;DR: In this article, the formation of F, H and α centers and self trapped excitons was investigated in KBr crystals by the irradiation of the pulsed electron beam from a Linac (30MeV, 0.8A, 20ns) and a Febetron 706 (0.6MeV, 7000A, 3ns).
Journal ArticleDOI

COLOR CENTERS PRODUCED IN KCl AND KBr BY PROLONGED X IRRADIATIONS AT LOW TEMPERATURES

TL;DR: In this article, the effect of an x irradiation of extended duration on the production of color centers in KCl and KBr at low temperatures and examine the implications with regard to possible color-center models.
Journal ArticleDOI

Recombination of Vacancies and Interstitials in KBr at Low Temperatures

TL;DR: In this article, the thermal annealing of KBr x rayed at temperatures below 20 ifmmode^\circ\else\textdegree\fi{}K was analyzed.
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