Proceedings ArticleDOI
High power static induction transistor
Tadahiro Ohmi,J. Nishizawa,M. Tatsuta +2 more
- pp 703-704
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TLDR
In this paper, a high-power SIT with a cell size of 12.8 ×12.8 mm2 has been fabricated to obtain killowatts operation in radio frequencies, which is characterized by burried gate and extremely long stripe channel structure.Abstract:
SIT is usually constructed as vertical and multi-channel structure, resulting in a realization of large area device, i.e., high current operation, where temperature dependence of SIT enhances its large area characteristics without accompanying thermal runaway, because the temperature coefficient of drain current is negative in high current region. An introduction of high resistivity region between gate and drain increases its breakdown voltage and decreases gate to drain capacitance, resulting in an improvement of handling power and frequency characteristic. High power SIT having a cell size of 12.8 × 12.8 mm2has been fabricated to obtain killowatts operation in radio frequencies, which is characterized by burried gate and extremely long stripe channel structure. Gate to drain breakdown voltage is higher than at least 800 V and maximum drain current is up to 60 A. Ultrasonic wave generator using two high power SITs in push-pull configuration exhibits 3 KW output operation at an efficiency higher than 85 % at a frequency of 28 KHz, where the driving power of SIT is Iess than 5W. 100 KHz switching regulator has been realized and exhibits 300 W output at an efficiency of 70 %. This efficiency is limited by properties of ferrite core. SIT has been confirmed experimentally very promising to high power transisters in high frequencies.read more
Citations
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Journal ArticleDOI
A review of SiC static induction transistor development for high-frequency power amplifiers
TL;DR: An overview of SiC static induction transistor (SIT) development is presented in this paper, where basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms.
Journal ArticleDOI
The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation
J. Nishizawa,K. Motoya,A. Itoh +2 more
TL;DR: The Si microwave recess gate type SIT (Static Induction Transistor) has been fabricated and the high drain blocking voltage up to 140 V with high gain was obtained in this paper, where the power gain of 13.7 dB up to 1.7 GHz, 10 dB at 2 GHz, 6 dB at 3 GHz, and the maximum frequency of oscillation of 4 GHz in common gate configuration have been realized.
Proceedings ArticleDOI
Recent advances in high temperature, high frequency SiC devices
Rowland C. Clarke,C.D. Brandt,S. Sriram,R.R. Siergiej,A.W. Morse,A.K. Agarwal,L.-S. Chen,V. Balakrishna,A.A. Burk +8 more
TL;DR: In this paper, a very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxia layers have been obtained with growth rates of 3-5 /spl mu/m/hr, exhibiting unintentional n-type doping of /spl sim/1/spl times/10/sup 15/ cm/sup -3/, and associated room temperature Hall mobilities of /pl sim/1000 cm/Sup 2//Vs.
Proceedings ArticleDOI
Recent application of silicon carbide to high power microwave
A.W. Morse,P.M. Esker,S. Sriram,J.J. Hawkins,L.-S. Chen,J.A. Ostop,T.J. Smith,C.D. Davis,R.R. Barron,Rowland C. Clarke,R.R. Siergiej,C.D. Brandt +11 more
TL;DR: Silicon carbide is emerging semiconductor material which is now proven to be especially well suited for high power, high frequency applications as mentioned in this paper, and it has been shown that silicon carbide MESFETs can achieve high power transistors from DC through X-band.
Journal ArticleDOI
Untersuchungen und Erfahrungen mit abschaltbaren Leistungshalbleitern
TL;DR: In this paper, new abschaltbare Leistungshalbleiter (GTO, bipolare Transistoren, IGT, MOSFET, SIT and schnelle Dioden) are presented.