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High pressure electrical resistivity study on cubic SnTe1−xSex

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This article is published in Physica Status Solidi B-basic Solid State Physics.The article was published on 1996-09-01. It has received 8 citations till now. The article focuses on the topics: Electrical resistivity and conductivity.

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Journal ArticleDOI

High pressure electrical resistivity study on nonlinear single crystal zinc thiourea sulphate (ZTS)

TL;DR: The lattice parameters of the grown crystals have been determined by the Energy dispersive x-ray diffraction technique (EDXRD) and the structure has been confirmed as discussed by the authors.
Journal ArticleDOI

Colossal enhancement of the thermoelectric power factor in stress-released orthorhombic phase of SnTe

TL;DR: In this paper, the authors measured the thermoelectric power (seebeck coefficient) and electrical resistivity of undoped single tin telluride (SnTe) crystals under applied high pressure up to 9 GPa, i.e., across the above phase transition.
Journal ArticleDOI

High pressure electrical resistivity study on nonlinear bis thiourea cadmium chloride (BTCC) single crystal

TL;DR: In this paper, the Bis Thiourea Cadmium Chloride (BTCC) crystals have been crystallized by slow evaporation technique and the lattice parameters of the grown crystals were determined by the Energy dispersive x-ray diffraction technique (EDXRD) and the structure has been confirmed.
Journal ArticleDOI

SnTe x Se 1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications

TL;DR: In this paper, a mixture of hexagonal Te and orthorhombic SnSe was found to have better properties than SnSe, and the absorption coefficient of SnTexSe1−x films was shown to reach a value of 0.93 eV.
Journal ArticleDOI

High pressure electrical resistivity study on nonlinear single crystal zinc thiourea chloride

TL;DR: In this paper, the lattice parameters of the grown ZTC crystals were determined by angle dispersive X-ray powder diffraction technique (XRD) and the structure was confirmed by high pressure electrical resistivity study.
References
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LAZY PULVERIX, a computer program, for calculating X‐ray and neutron diffraction powder patterns

TL;DR: In this paper, a computer program has been written with the aim of calculating powder patterns without the use of crystallographic tables by deriving all symmetry information such as general equivalent positions from the Hermann-Mauguin space-group symbols.
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Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors.

TL;DR: For both crystals, an additional structure, associated with an impurity level, is observed in the a polarization, and its shape reveals the three-dimensional nature of the electronic properties in these compounds.
Journal ArticleDOI

High-Pressure Phase Transition in Tin Telluride.

TL;DR: At 18 kilobars, tin telluride transforms from a sodium chloride-type structure to an orthorhombic crystal structure (space group Pnma), accompanied by a 360-percent increase in electrical resistivity.
Journal ArticleDOI

Variation in electrical properties of SnTe thin films with substrate temperature

TL;DR: In this paper, the influence of substrate temperature (300 to 460 K) on the electrical resistivity and thermoelectric power of thin films of SnTe and SnTe doped with 10% excess tin are investigated.
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