Proceedings ArticleDOI
Impact of acid/quencher behavior on lithography performance
Hiroshi Fukuda,Keiko Hattori,Takuya Hagiwara +2 more
- Vol. 4346, pp 319-330
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TLDR
In this paper, the acid-quencher mutual diffusion/quenching model is implemented to the fast resist image simulator and accuracy better than 10nm was obtained over wide varieties of 0.13-node metal-level pattern features.Abstract:
To describe complex acid/quencher interaction and their mutual diffusion in imaging with chemically amplified resist films, our acid-quencher mutual diffusion/quenching model is implemented to the fast resist image simulator. Accuracy better than 10-nm was obtained over wide varieties of 0.13- node metal-level pattern features. The model also suggested that diffusion of quencher, as well as that of acid, significantly degrades proximity effects and MEF.read more
Citations
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Proceedings ArticleDOI
Impact of resist blur on MEF, OPC, and CD control
TL;DR: In this article, a simple lithographic model utilizing a double Gaussian resist blur was developed and applied to the rapid calculation of lithographic CDs, which allowed large Monte Carlo simulations to explore CD variation at different pitches, pointing out pitches that were particularly vulnerable to CD variation.
Proceedings ArticleDOI
Toward standard process models for OPC
TL;DR: The Compact Model 1 (CM1) resist model designed for use in OPC and OPC verification is described and proposed to use CM1 model as a standard pattern transfer model during chip-scale process simulations.
Patent
Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake
TL;DR: In this paper, a method for enhancing resist sensitivity and resolution based on influencing the effects of photoacid drift and diffusion by an externally applied electric field that may optionally include a direct current offset bias is disclosed.
Journal ArticleDOI
Acid–base reactions in a positive tone chemically amplified photoresist and their effect on imaging
TL;DR: In this paper, the authors investigated the impact of the details of the neutralization kinetics on image formation in PTBOCST/TBI-PFBS resist as a function of pitch, dose, base concentration, and temperature.
Journal ArticleDOI
Photoresist and stochastic modeling
TL;DR: Results presented here show that a wide range of physical simulation results can be well matched by an empirical two-parameter model based on blurred image log-slope (ILS) for lines/spaces and normalized ILS for holes, largely consistent with published experimental results; however, there is some disagreement with the recently published dataset of De Bisschop.