Journal ArticleDOI
In situ electrical conductivity and amorphous‐crystalline transition in vacuum‐deposited amorphous thin films of a Se50Te50 alloy
V. Damodara Das,P. Jansi Lakshmi +1 more
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In situ electrical conductivity measurements have been made on vacuum-deposited amorphous thin films of various thicknesses of a Se50Te50 alloy in the temperature range 300-430 K as mentioned in this paper.Abstract:
In situ electrical conductivity measurements have been made on vacuum‐deposited amorphous thin films of various thicknesses of a Se50Te50 alloy in the temperature range 300–430 K. From the electrical conductivity, x‐ray studies, and electron diffraction studies it is found that the as‐grown films are amorphous and undergo an irreversible amorphous‐crystalline transition on heating in situ. The amorphous‐crystalline transition takes place in the temperature range 320–360 K for the different films. However, no systematic variation of the transition temperature with the thickness of the films is observed. All the films except the thinnest ones have a sharp transition temperature. X‐ray and electron diffraction analyses show that the Se50Te50 films above 360 K are polycrystalline. Above 360 K the electrical conductivity of the polycrystalline Se50Te50 films varies as an exponential function of reciprocal temperature.read more
Citations
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Calorimetric study on the crystallization of a Se0.8Te0.2 chalcogenide glass
TL;DR: In this paper, the results of differential scanning calorimetry (DSC) at different heating rates on Se0.8Te0.2 chalcogenide glass are reported and discussed.
Journal ArticleDOI
Differential scanning calorimetric study of chalcogenide glass Se0.7Te0.3
TL;DR: In this paper, the results of differential scanning calorimetric (DSC) under isothermal and non-isothermal conditions on Se 0.7 Te 0.3 glass are reported and discussed.
Journal ArticleDOI
Differential scanning calorimetric study of Bi10Se80In10 chalcogenide glass
TL;DR: In this paper, the results indicate that the crystallization process is a two-dimensional growth and the average calculated value of activation energy is 330.2 kJ mol−1 for Bi10Se80In10 chalcogenide.
Journal ArticleDOI
Preparation and Characterization of Thin Films by Coevaporation
Bin Lv,Songbai Hu,Wei Li,Xia Di,Lianghuan Feng,Jingquan Zhang,Lili Wu,Yaping Cai,Bing Li,Zhi Lei +9 more
TL;DR: In this article, the authors described the deposition of thin films on soda-lime glass substrates by coevaporation of Sb and Te, and the abnormal electrical transport behavior occurred from in situ electrical conductivity measurements.
Journal ArticleDOI
Structure and electrical properties of vacuum-deposited antimony telluride thin films on an amorphous substrate
TL;DR: Sb2Te3 thin films, 50-109 nm thick, have been prepared by vacuum evaporation on to quartz substrates as mentioned in this paper, and optical measurements indicate that there is an indirect transition having an energy of 1.9 eV.
References
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Journal ArticleDOI
Studies on Tellurium‐Selenium Alloys
TL;DR: In this paper, the variation of cell dimensions with composition departs only slightly from linearity: c shows a certain tendency to contraction (this corresponds to a smaller valency angle in the chains of atoms than is required by a linear variation): a varies much less (2 percent between Se and Te) and in a manner which depends upon the preparation of the alloy, as already observed for pure selenium by H. Krebs.
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A survey of amorphous Se−Te semiconductors and their characteristic aspects of crystallization
M.F. Kotkata,M. K. El-Mously +1 more
TL;DR: In this article, the compositional dependence of some physical properties such as: density, dc conductivity and thermal conductivity, have been investigated and the effects of composition, temperature and time of annealing are explained in terms of structural changes and crystallization kinetics.
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Electrical transport in bulk amorphous Se, Se-Te, Se-Sb, and Se-Te-Ge
TL;DR: In this article, conductivity measurements have been made as a function of temperature and electric field in bulk amorphous Se, Se-Te, SeSb, and SeTe-Ge, to identify the conduction mechanism and to study the effect of various dopants in Se on the conductivity.
Journal ArticleDOI
Studies of structural relaxation and crystallization kinetics of Se X Te1−X amorphous system by DTA measurements
TL;DR: Differential thermal analysis studies of the binary system SeXTe1−X are reported and the phenomena accompanying the temperature-induced changes in amorphous samples are discussed in this article, where the enthalpy of crystallization of the samples is calculated from DTA measurements.
Journal ArticleDOI
Electrical transport in amorphous TexSe1−x films
TL;DR: In this paper, conductivity measurements were made on thin amorphous films of Te x Se 1−x of various thicknesses in the temperature range 100 −330 K. The effect of the addition of selenium to tellurium is to reduce the density of states near the Fermi level and to increase the conductivity activation energy.